Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

doi:10.1088/1674-1056/28/1/018504

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/28/1/018504

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Y M Lu(吕有明), C Li(李超), X H Chen(陈相和), S Han(韩瞬), P J Cao(曹培江), F Jia(贾芳), Y X Zeng(曾玉祥), X K Liu(刘新科), W Y Xu(许望颖), W J Liu(柳文军), D L Zhu(朱德亮)

College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China

收稿日期:2018-08-22 修回日期:2018-11-07 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Y M Lu E-mail:ymlu@szu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51872187, 51302174, 11774241, and 61704111), the National Key Research and Development Program of China (Grant No. 2017YFB0400304), the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2016A030313060 and 2017A030310524), the Project of Department of Education of Guangdong Province, China (Grant No. 2014KTSCX110), the Fundamental Research Project of Shenzhen, China (Grant No. JCYJ20180206162132006), and the Science and Technology Foundation of Shenzhen, China (Grant No. JCYJ2015-2018).

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China

Received:2018-08-22 Revised:2018-11-07 Online:2019-01-05 Published:2019-01-05
Contact: Y M Lu E-mail:ymlu@szu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51872187, 51302174, 11774241, and 61704111), the National Key Research and Development Program of China (Grant No. 2017YFB0400304), the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2016A030313060 and 2017A030310524), the Project of Department of Education of Guangdong Province, China (Grant No. 2014KTSCX110), the Fundamental Research Project of Shenzhen, China (Grant No. JCYJ20180206162132006), and the Science and Technology Foundation of Shenzhen, China (Grant No. JCYJ2015-2018).

摘要/Abstract

摘要：

Gallium oxide (Ga₂O₃) thin films were deposited on a-Al₂O₃ (1120) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650℃. By reducing the oxygen pressure, mixed-phase Ga₂O₃ films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga₂O₃ thin film solar-blind photodetectors (SBPDs) were prepared. Comparing the responsivities of the mixed-phase Ga₂O₃ SBPDs and the single β-Ga₂O₃ SBPDs at a bias voltage of 25 V, it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga₂O₃ thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga₂O₃ thin film SBPDs.

关键词: Ga₂O₃, mixed-phase, solar-blind photodetector, pulsed laser deposition

Abstract:

Key words: Ga₂O₃, mixed-phase, solar-blind photodetector, pulsed laser deposition

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

81.15.Fg (Pulsed laser ablation deposition) 81.10.Pq (Growth in vacuum)

吕有明, 李超, 陈相和, 韩瞬, 曹培江, 贾芳, 曾玉祥, 刘新科, 许望颖, 柳文军, 朱德亮. Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition[J]. 中国物理B, 2019, 28(1): 18504-018504.

Y M Lu(吕有明), C Li(李超), X H Chen(陈相和), S Han(韩瞬), P J Cao(曹培江), F Jia(贾芳), Y X Zeng(曾玉祥), X K Liu(刘新科), W Y Xu(许望颖), W J Liu(柳文军), D L Zhu(朱德亮). Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition[J]. Chin. Phys. B, 2019, 28(1): 18504-018504.

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Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

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