Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

doi:10.1088/1674-1056/27/1/017302

中国物理B ›› 2018, Vol. 27 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/27/1/017302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北)

1 School of Space Science and Physics, Shandong University(Weihai), Weihai 264209, China;
2 School of Information Engineering, Shandong University(Weihai), Weihai 264209, China;
3 Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
4 School of Chemistry, the University of Melbourne, Victoria 3010, Australia

收稿日期:2017-08-18 修回日期:2017-10-07 出版日期:2018-01-05 发布日期:2018-01-05
通讯作者: Wei-Min Zheng, Bin Li E-mail:wmzheng@sdu.edu.cn;binli@mail.sitp.ac.cn
基金资助:
Project supported by Shandong Province Natural Science Foundation, China (Grant No. ZR2017MF018) and the National Natural Science Foundation of China (Grant No. 61675223).

Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

Wei-Min Zheng(郑卫民)¹, Wei-Yan Cong(丛伟艳)¹, Su-Mei Li(李素梅)², Ai-Fang Wang(王爱芳)¹, Bin Li(李斌)³, Hai-Bei Huang(黄海北)⁴

1 School of Space Science and Physics, Shandong University(Weihai), Weihai 264209, China;
2 School of Information Engineering, Shandong University(Weihai), Weihai 264209, China;
3 Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
4 School of Chemistry, the University of Melbourne, Victoria 3010, Australia

Received:2017-08-18 Revised:2017-10-07 Online:2018-01-05 Published:2018-01-05
Contact: Wei-Min Zheng, Bin Li E-mail:wmzheng@sdu.edu.cn;binli@mail.sitp.ac.cn
Supported by:
Project supported by Shandong Province Natural Science Foundation, China (Grant No. ZR2017MF018) and the National Natural Science Foundation of China (Grant No. 61675223).

摘要/Abstract

摘要： Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ -doped with Be acceptors at the well center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical (LO) phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.

关键词: coupled mode, Raman spectrum, δ-doped GaAs/AlAs multiple quantum wells

Abstract: Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ -doped with Be acceptors at the well center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical (LO) phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.

Key words: coupled mode, Raman spectrum, δ-doped GaAs/AlAs multiple quantum wells

中图分类号: (Quantum wells)

73.21.Fg

63.20.kd (Phonon-electron interactions) 71.55.Eq (III-V semiconductors)

郑卫民, 丛伟艳, 李素梅, 王爱芳, 李斌, 黄海北. Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. 中国物理B, 2018, 27(1): 17302-017302.

Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北). Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. Chin. Phys. B, 2018, 27(1): 17302-017302.

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Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

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