γ radiation caused graphene defects and increased carrier density

doi:10.1088/1674-1056/20/8/086102

中国物理B ›› 2011, Vol. 20 ›› Issue (8): 86102-086102.doi: 10.1088/1674-1056/20/8/086102

γ radiation caused graphene defects and increased carrier density

韩买兴, 姬濯宇, 商立伟, 陈映平, 王宏, 刘欣, 李冬梅, 刘明

Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2011-03-16 修回日期:2011-04-07 出版日期:2011-08-15 发布日期:2011-08-15
基金资助:
Project partially supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703) and the National Natural Science Foundation of China (Grant Nos. 60825403, 90607022, and 61001043).

$\gamma$ radiation caused graphene defects and increased carrier density

Han Mai-Xing(韩买兴), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Chen Ying-Ping(陈映平), Wang Hong(王宏), Liu Xin(刘欣), Li Dong-Mei(李冬梅), and Liu Ming(刘明)^†

Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2011-03-16 Revised:2011-04-07 Online:2011-08-15 Published:2011-08-15
Supported by:
Project partially supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703) and the National Natural Science Foundation of China (Grant Nos. 60825403, 90607022, and 61001043).

摘要/Abstract

摘要： We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

关键词: graphene, γ ray radiation, Raman spectrum, defects

Abstract: We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by $\gamma$ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

Key words: graphene, $\gamma$ ray radiation, Raman spectrum, defects

中图分类号: (Structure of graphene)

61.48.Gh

68.65.Pq (Graphene films) 72.80.Vp (Electronic transport in graphene) 73.22.Pr (Electronic structure of graphene)

韩买兴, 姬濯宇, 商立伟, 陈映平, 王宏, 刘欣, 李冬梅, 刘明. γ radiation caused graphene defects and increased carrier density[J]. 中国物理B, 2011, 20(8): 86102-086102.

Han Mai-Xing(韩买兴), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Chen Ying-Ping(陈映平), Wang Hong(王宏), Liu Xin(刘欣), Li Dong-Mei(李冬梅), and Liu Ming(刘明). $\gamma$ radiation caused graphene defects and increased carrier density[J]. Chin. Phys. B, 2011, 20(8): 86102-086102.

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γ radiation caused graphene defects and increased carrier density

$\gamma$ radiation caused graphene defects and increased carrier density

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