中国物理B ›› 2017, Vol. 26 ›› Issue (6): 60705-060705.doi: 10.1088/1674-1056/26/6/060705

• GENERAL • 上一篇    下一篇

Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator

Ji-Cong Zhao(赵继聪), Quan Yuan(袁泉), Feng-Xiang Wang(王凤祥), Xiao Kan(阚骁), Guo-Wei Han(韩国威), Ling Sun(孙玲), Hai-Yan Sun(孙海燕), Jin-Ling Yang(杨晋玲), Fu-Hua Yang(杨富华)   

  1. 1 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;
    4 State Key Laboratory of Transducer Technology, Shanghai 200050, China
  • 收稿日期:2017-01-06 修回日期:2017-03-06 出版日期:2017-06-05 发布日期:2017-06-05
  • 通讯作者: Jin-Ling Yang E-mail:jlyang@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61234007, 61404136, and 61504130), the Fund from the Ministry of Science and Technology of China (Grant No. 2013YQ16055103), the Key Research & Development Program of Jiangsu Province, China (Grant No. BE2016007-2), and the Major Project of Natural Science Research of the Higher Education Institutions of Jiangsu Province, China (Grant No. 16KJA510006).

Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator

Ji-Cong Zhao(赵继聪)1,3, Quan Yuan(袁泉)1, Feng-Xiang Wang(王凤祥)1,4, Xiao Kan(阚骁)1,4, Guo-Wei Han(韩国威)1, Ling Sun(孙玲)3, Hai-Yan Sun(孙海燕)3, Jin-Ling Yang(杨晋玲)1,2,4, Fu-Hua Yang(杨富华)1,2   

  1. 1 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;
    4 State Key Laboratory of Transducer Technology, Shanghai 200050, China
  • Received:2017-01-06 Revised:2017-03-06 Online:2017-06-05 Published:2017-06-05
  • Contact: Jin-Ling Yang E-mail:jlyang@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61234007, 61404136, and 61504130), the Fund from the Ministry of Science and Technology of China (Grant No. 2013YQ16055103), the Key Research & Development Program of Jiangsu Province, China (Grant No. BE2016007-2), and the Major Project of Natural Science Research of the Higher Education Institutions of Jiangsu Province, China (Grant No. 16KJA510006).

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摘要： In this paper, we present a three-dimensional (3D) vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system (RF MEMS) resonator, in which low-loss silicon vias is used to transmit RF signals. Au-Sn solder bonding is adopted to provide a vacuum encapsulation as well as electrical conductions. A RF model of the encapsulation cap is established to evaluate the parasitic effect of the packaging, which provides an effective design solution of 3D RF MEMS encapsulation. With the proposed packaging structure, the signal-to-background ratio (SBR) of 24 dB is achieved, as well as the quality factor (Q-factor) of the resonator increases from 8000 to 10400 after packaging. The packaged resonator has a linear frequency-temperature (f-T) characteristic in a temperature range between 0℃ and 100℃. And the package shows favorable long-term stability of the Q-factor over 200 days, which indicates that the package has excellent hermeticity. Furthermore, the average shear strength is measured to be 43.58 MPa among 10 samples.

关键词: 3D packaging, coupling noise, Q-factor, RF MEMS resonator

Abstract: In this paper, we present a three-dimensional (3D) vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system (RF MEMS) resonator, in which low-loss silicon vias is used to transmit RF signals. Au-Sn solder bonding is adopted to provide a vacuum encapsulation as well as electrical conductions. A RF model of the encapsulation cap is established to evaluate the parasitic effect of the packaging, which provides an effective design solution of 3D RF MEMS encapsulation. With the proposed packaging structure, the signal-to-background ratio (SBR) of 24 dB is achieved, as well as the quality factor (Q-factor) of the resonator increases from 8000 to 10400 after packaging. The packaged resonator has a linear frequency-temperature (f-T) characteristic in a temperature range between 0℃ and 100℃. And the package shows favorable long-term stability of the Q-factor over 200 days, which indicates that the package has excellent hermeticity. Furthermore, the average shear strength is measured to be 43.58 MPa among 10 samples.

Key words: 3D packaging, coupling noise, Q-factor, RF MEMS resonator

中图分类号:  (Micromechanical devices and systems)

  • 07.10.Cm
85.85.+j (Micro- and nano-electromechanical systems (MEMS/NEMS) and devices) 07.50.Hp (Electrical noise and shielding equipment)