[1] |
Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell[J]. 中国物理B, 2023, 32(2): 28801-028801. |
[2] |
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701. |
[3] |
Xiaolei Liu(刘晓磊), Zhenhai Yu(于振海), Jianfu Li(李建福), Zhenzhen Xu(徐真真), Chunyin Zhou(周春银), Zhaohui Dong(董朝辉), Lili Zhang(张丽丽), Xia Wang(王霞), Na Yu(余娜), Zhiqiang Zou(邹志强),Xiaoli Wang(王晓丽), and Yanfeng Guo(郭艳峰). A new transition metal diphosphide α-MoP2 synthesized by a high-temperature and high-pressure technique[J]. 中国物理B, 2023, 32(1): 18102-018102. |
[4] |
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503. |
[5] |
Hsiang-Chun Wang(王祥骏), Yuheng Lin(林钰恒), Xiao Liu(刘潇), Xuanhua Deng(邓煊华),Jianwei Ben(贲建伟), Wenjie Yu(俞文杰), Deliang Zhu(朱德亮), and Xinke Liu(刘新科). A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer[J]. 中国物理B, 2023, 32(1): 18504-018504. |
[6] |
Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature[J]. 中国物理B, 2023, 32(1): 18101-018101. |
[7] |
Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal[J]. 中国物理B, 2022, 31(9): 97503-097503. |
[8] |
Xin-Rong Hu(胡新荣), Long-Xiang Liu(刘龙祥), Wei Jiang(蒋伟), Jie Ren(任杰), Gong-Tao Fan(范功涛), Hong-Wei Wang(王宏伟), Xi-Guang Cao(曹喜光), Long-Long Song(宋龙龙), Ying-Du Liu(刘应都), Yue Zhang(张岳), Xin-Xiang Li(李鑫祥), Zi-Rui Hao(郝子锐), Pan Kuang(匡攀), Xiao-He Wang(王小鹤), Ji-Feng Hu(胡继峰), Bing Jiang(姜炳), De-Xin Wang(王德鑫), Suyalatu Zhang(张苏雅拉吐), Zhen-Dong An(安振东), Yu-Ting Wang(王玉廷), Chun-Wang Ma(马春旺), Jian-Jun He(何建军), Jun Su(苏俊), Li-Yong Zhang(张立勇), Yu-Xuan Yang(杨宇萱), Sheng Jin(金晟), and Kai-Jie Chen(陈开杰). New experimental measurement of natSe(n, γ) cross section between 1 eV to 1 keV at the CSNS Back-n facility[J]. 中国物理B, 2022, 31(8): 80101-080101. |
[9] |
Xiaojin Yang(杨小锦), Tan Qu(屈檀), Zhensen Wu(吴振森), Haiying Li(李海英), Lu Bai(白璐), Lei Gong(巩蕾), and Zhengjun Li(李正军). Reflection and transmission of an Airy beam in a dielectric slab[J]. 中国物理B, 2022, 31(7): 74202-074202. |
[10] |
Yao Wang(王遥), Dan Xu(徐丹), Shan Gao(高姗), Qi Chen(陈启), Dayi Zhou(周大义), Xin Fan(范鑫), Xin-Jian Li(李欣健), Lijie Chang(常立杰),Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiao-Peng Jia(贾晓鹏). Reaction mechanism of metal and pyrite under high-pressure and high-temperature conditions and improvement of the properties[J]. 中国物理B, 2022, 31(6): 66206-066206. |
[11] |
Bing Jiang(姜炳), Jianlong Han(韩建龙), Jie Ren(任杰), Wei Jiang(蒋伟), Xiaohe Wang(王小鹤), Zian Guo(郭子安), Jianglin Zhang(张江林), Jifeng Hu(胡继峰), Jingen Chen(陈金根), Xiangzhou Cai(蔡翔舟), Hongwei Wang(王宏伟), Longxiang Liu(刘龙祥), Xinxiang Li(李鑫祥), Xinrong Hu(胡新荣), and Yue Zhang(张岳). Measurement of 232Th (n,γ) cross section at the CSNS Back-n facility in the unresolved resonance region from 4 keV to 100 keV[J]. 中国物理B, 2022, 31(6): 60101-060101. |
[12] |
Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦). A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission[J]. 中国物理B, 2022, 31(6): 68401-068401. |
[13] |
Qun Chen(陈群), Juefei Wu(吴珏霏), Tong Chen(陈统), Xiaomeng Wang(王晓梦), Chi Ding(丁弛), Tianheng Huang(黄天衡), Qing Lu(鲁清), and Jian Sun(孙建). Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds[J]. 中国物理B, 2022, 31(5): 56201-056201. |
[14] |
Xin-Miao Zhu(朱鑫淼), Min Cui(崔敏), Yu Wang(汪宇), Tian-Jing Yu(于添景),Jin-Xiang Deng(邓金祥), and Hong-Li Gao(高红丽). GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model[J]. 中国物理B, 2022, 31(5): 58801-058801. |
[15] |
Pan-Pan Peng(彭盼盼), Chao Wang(王超), Lan-Wei Li(李岚伟), Shu-Yao Li(李淑瑶), and Yan-Qun Chen(陈艳群). Research status and performance optimization of medium-temperature thermoelectric material SnTe[J]. 中国物理B, 2022, 31(4): 47307-047307. |