High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H
2O as an oxidizer
林家勇, 裴艳丽, 卓毅, 陈梓敏, 胡锐钦, 蔡广烁, 王钢
High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H
2O as an oxidizer
Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)
中国物理B
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2016, (11): 118506
-118506
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DOI: 10.1088/1674-1056/25/11/118506