Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

doi:10.1088/1674-1056/25/11/118401

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118401-118401.doi: 10.1088/1674-1056/25/11/118401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进)

School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-05-23 修回日期:2016-06-30 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Zhangming Zhu E-mail:zmyh@263.net
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant Nos. 61376039, 61334003, 61574104, and 61474088).

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进)

School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-05-23 Revised:2016-06-30 Online:2016-11-05 Published:2016-11-05
Contact: Zhangming Zhu E-mail:zmyh@263.net
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant Nos. 61376039, 61334003, 61574104, and 61474088).

摘要/Abstract

摘要： In this paper, ground-signal-ground type through-silicon vias (TSVs) exploiting air gaps as insulation layers are designed, analyzed and simulated for applications in millimeter wave. The compact wideband equivalent-circuit model and passive elements (RLGC) parameters based on the physical parameters are presented with the frequency up to 100 GHz. The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm. Therefore, the applied voltage of TSVs only needs to achieve the flatband voltage, and there is no need to indicate the threshold voltage. This is due to the small permittivity of air gaps. The proposed model shows good agreement with the simulation results of ADS and Ansoft's HFSS over a wide frequency range.

关键词: three-dimensional integrated circuits, through-silicon vias, air gaps, high frequency

Abstract: In this paper, ground-signal-ground type through-silicon vias (TSVs) exploiting air gaps as insulation layers are designed, analyzed and simulated for applications in millimeter wave. The compact wideband equivalent-circuit model and passive elements (RLGC) parameters based on the physical parameters are presented with the frequency up to 100 GHz. The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm. Therefore, the applied voltage of TSVs only needs to achieve the flatband voltage, and there is no need to indicate the threshold voltage. This is due to the small permittivity of air gaps. The proposed model shows good agreement with the simulation results of ADS and Ansoft's HFSS over a wide frequency range.

Key words: three-dimensional integrated circuits, through-silicon vias, air gaps, high frequency

中图分类号: (Electronic circuits)

84.30.-r

84.30.Bv (Circuit theory)

刘晓贤, 朱樟明, 杨银堂, 丁瑞雪, 李跃进. Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits[J]. 中国物理B, 2016, 25(11): 118401-118401.

Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进). Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits[J]. Chin. Phys. B, 2016, 25(11): 118401-118401.

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Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

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