中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/25/10/108505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Surface treatment on polyethylenimine interlayer to improve inverted OLED performance

Chang-Ting Wei(魏昌庭), Jin-Yong Zhuang(庄锦勇), Ya-Li Chen(陈雅丽), Dong-Yu Zhang(张东煜), Wen-Ming Su(苏文明), Zheng Cui(崔铮)   

  1. 1 Department of Chemistry, Shanghai University, Shanghai 200444, China;
    2 Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2016-03-11 修回日期:2016-06-12 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Ya-Li Chen, Dong-Yu Zhang E-mail:ylchen@staff.shu.edu.cn;dyzhang2010@sinano.ac.cn
  • 基金资助:
    Project supported by the National Key Basic Research Project of China (Grant No. 2015CB351901), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA09020201), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2013206), the National Natural Science Foundation of China (Grant No. 21402233), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012631 and BK20140387).

Surface treatment on polyethylenimine interlayer to improve inverted OLED performance

Chang-Ting Wei(魏昌庭)1,2, Jin-Yong Zhuang(庄锦勇)2, Ya-Li Chen(陈雅丽)1, Dong-Yu Zhang(张东煜)2, Wen-Ming Su(苏文明)2, Zheng Cui(崔铮)2   

  1. 1 Department of Chemistry, Shanghai University, Shanghai 200444, China;
    2 Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2016-03-11 Revised:2016-06-12 Online:2016-10-05 Published:2016-10-05
  • Contact: Ya-Li Chen, Dong-Yu Zhang E-mail:ylchen@staff.shu.edu.cn;dyzhang2010@sinano.ac.cn
  • Supported by:
    Project supported by the National Key Basic Research Project of China (Grant No. 2015CB351901), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA09020201), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2013206), the National Natural Science Foundation of China (Grant No. 21402233), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012631 and BK20140387).

摘要: Polyethylenimine (PEI) interlayer rinsing with different solvents for inverted organic light emitting diodes (OLEDs) is systematically studied in this paper. In comparison with the pristine one, the maximum current efficiency (CEmax) and power efficiency (PEmax) are enhanced by 21% and 22% for the device rinsing by ethylene glycol monomethyl ether (EEA). Little effect is found on the work function of the PEI interlayer rinsed by deionized water (DI), ethanol (EtOH), and EEA. On the other hand, the surface morphologies of PEI through different solvent treatments are quite different. Our results indicates that the surface morphology is the key to improving the device performance for IOLED as the work function of PEI keeps stable.

关键词: inverted OLED, surface treatment, morphology, polyethylenimine

Abstract: Polyethylenimine (PEI) interlayer rinsing with different solvents for inverted organic light emitting diodes (OLEDs) is systematically studied in this paper. In comparison with the pristine one, the maximum current efficiency (CEmax) and power efficiency (PEmax) are enhanced by 21% and 22% for the device rinsing by ethylene glycol monomethyl ether (EEA). Little effect is found on the work function of the PEI interlayer rinsed by deionized water (DI), ethanol (EtOH), and EEA. On the other hand, the surface morphologies of PEI through different solvent treatments are quite different. Our results indicates that the surface morphology is the key to improving the device performance for IOLED as the work function of PEI keeps stable.

Key words: inverted OLED, surface treatment, morphology, polyethylenimine

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.60.Fi (Electroluminescence) 72.80.Le (Polymers; organic compounds (including organic semiconductors))