中国物理B ›› 2016, Vol. 25 ›› Issue (7): 78103-078103.doi: 10.1088/1674-1056/25/7/078103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

Da-cheng Mao(毛达诚), Zhi Jin(金智), Shao-qing Wang(王少青), Da-yong Zhang(张大勇), Jing-yuan Shi(史敬元), Song-ang Peng(彭松昂), Xuan-yun Wang(王选芸)   

  1. Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2015-12-11 修回日期:2016-03-15 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Zhi Jin E-mail:jinzhi@ime.ac.cn
  • 基金资助:
    Project by the National Science and Technology Major Project, China (Grant No. 2011ZX02707.3), the National Natural Science Foundation of China (Grant No. 61136005), the Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the Project of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515003).

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

Da-cheng Mao(毛达诚), Zhi Jin(金智), Shao-qing Wang(王少青), Da-yong Zhang(张大勇), Jing-yuan Shi(史敬元), Song-ang Peng(彭松昂), Xuan-yun Wang(王选芸)   

  1. Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2015-12-11 Revised:2016-03-15 Online:2016-07-05 Published:2016-07-05
  • Contact: Zhi Jin E-mail:jinzhi@ime.ac.cn
  • Supported by:
    Project by the National Science and Technology Major Project, China (Grant No. 2011ZX02707.3), the National Natural Science Foundation of China (Grant No. 61136005), the Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the Project of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515003).

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摘要： Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 Ω·μm to sub 200 Ω·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.

关键词: graphene, field effect transistor, contact resistance

Abstract: Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 Ω·μm to sub 200 Ω·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.

Key words: graphene, field effect transistor, contact resistance

中图分类号:  (Graphene)

  • 81.05.ue
73.22.Pr (Electronic structure of graphene) 73.40.-c (Electronic transport in interface structures) 72.80.Vp (Electronic transport in graphene)