中国物理B ›› 2016, Vol. 25 ›› Issue (3): 38101-038101.doi: 10.1088/1674-1056/25/3/038101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation

Shu-Zhen Yu(于淑珍), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Kui-Long Li(李奎龙),Xu-Lu Zeng(曾徐路), Yong-Ming Zhao(赵勇明), Hui Yang(杨辉)   

  1. 1. Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2015-10-15 修回日期:2015-11-05 出版日期:2016-03-05 发布日期:2016-03-05
  • 通讯作者: Jian-Rong Dong E-mail:jrdong2007@sinano.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Suzhou Science and Technology Project, China (Grant No. ZXG2013044).

Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation

Shu-Zhen Yu(于淑珍)1, Jian-Rong Dong(董建荣)1, Yu-Run Sun(孙玉润)1, Kui-Long Li(李奎龙)1,2,Xu-Lu Zeng(曾徐路)1,2, Yong-Ming Zhao(赵勇明)1, Hui Yang(杨辉)1   

  1. 1. Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2015-10-15 Revised:2015-11-05 Online:2016-03-05 Published:2016-03-05
  • Contact: Jian-Rong Dong E-mail:jrdong2007@sinano.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Suzhou Science and Technology Project, China (Grant No. ZXG2013044).

RichHTML

0

PDF (PC)

295

赞

摘要： Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In0.27Ga0.73As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two <110> directions using InAlGaAs buffer layers on 7° misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In0.27Ga0.73As layers by the substrate miscut angles, In0.27Ga0.73As grown on 2° and 15° misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60° misfit dislocations were found to be the reasons for asymmetry properties of In0.27Ga0.73As grown on 2° and 15° substrates, respectively. Photoluminescence results proved that the In0.27Ga0.73As with symmetric properties has better optical properties than the In0.27Ga0.73As with asymmetric properties at room temperature. These results imply that high quality metamorphic In0.27Ga0.73As can be achieved with controllable isotropic electron transport property.

关键词: In0.27Ga0.73As, substrate misorientation, symmetry, MOCVD

Abstract: Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In0.27Ga0.73As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two <110> directions using InAlGaAs buffer layers on 7° misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In0.27Ga0.73As layers by the substrate miscut angles, In0.27Ga0.73As grown on 2° and 15° misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60° misfit dislocations were found to be the reasons for asymmetry properties of In0.27Ga0.73As grown on 2° and 15° substrates, respectively. Photoluminescence results proved that the In0.27Ga0.73As with symmetric properties has better optical properties than the In0.27Ga0.73As with asymmetric properties at room temperature. These results imply that high quality metamorphic In0.27Ga0.73As can be achieved with controllable isotropic electron transport property.

Key words: In0.27Ga0.73As, substrate misorientation, symmetry, MOCVD

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis)