Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)

doi:10.1088/1674-1056/25/1/017302

中国物理B ›› 2016, Vol. 25 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/25/1/017302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)

Pan Zhou(周攀) and Da-Wei He(何大伟)

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2015-07-13 修回日期:2015-09-21 出版日期:2016-01-05 发布日期:2016-01-05
通讯作者: Da-Wei He E-mail:dwhe@bjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61335006, 61378073, and 61527817), the Beijing Municipal Science and Technology Committee, China (Grant No. Z151100003315006), and Fundamental Research Funds for the Central Universities of Beijing Jiaotong University, China (Grant No. 2012YJS123).

Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)

Pan Zhou(周攀) and Da-Wei He(何大伟)

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

Received:2015-07-13 Revised:2015-09-21 Online:2016-01-05 Published:2016-01-05
Contact: Da-Wei He E-mail:dwhe@bjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61335006, 61378073, and 61527817), the Beijing Municipal Science and Technology Committee, China (Grant No. Z151100003315006), and Fundamental Research Funds for the Central Universities of Beijing Jiaotong University, China (Grant No. 2012YJS123).

摘要/Abstract

摘要： On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC(0001) can be deliberately controlled by decorating the buffer layer with specific atoms (i.e., F, Cl, O, or N). More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.

关键词: graphene, interface magnetism, doping, SiC

Abstract: On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC(0001) can be deliberately controlled by decorating the buffer layer with specific atoms (i.e., F, Cl, O, or N). More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.

Key words: graphene, interface magnetism, doping, SiC

中图分类号: (Electronic structure of graphene)

73.22.Pr

81.05.ue (Graphene) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

周攀, 何大伟. Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)[J]. 中国物理B, 2016, 25(1): 17302-017302.

Pan Zhou(周攀) and Da-Wei He(何大伟). Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)[J]. Chin. Phys. B, 2016, 25(1): 17302-017302.

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Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)

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