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Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201. |
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Wen-Hong Ouyang(欧阳文泓), Jian-Bo Liu(刘剑波), Wen-Sheng Lai(赖文生),Jia-Hao Li(李家好), and Bai-Xin Liu(柳百新). Atomic simulations of primary irradiation damage in U-Mo-Xe system[J]. 中国物理B, 2023, 32(3): 36101-036101. |
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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701. |
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Tao-Wen Xiong(熊涛文), Xiao-Ping Chen(陈小平), Ye-Ping Lin(林也平), Xin-Fu He(贺新福), Wen Yang(杨文), Wang-Yu Hu(胡望宇), Fei Gao(高飞), and Hui-Qiu Deng(邓辉球). Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy[J]. 中国物理B, 2023, 32(2): 20206-020206. |
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Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101. |
[7] |
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302. |
[8] |
Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Surface structure modification of ReSe2 nanosheets via carbon ion irradiation[J]. 中国物理B, 2023, 32(2): 26101-026101. |
[9] |
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306. |
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Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103. |
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Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas[J]. 中国物理B, 2023, 32(1): 15202-015202. |
[12] |
Chun-Yang Luo(罗春阳), Bo Cui(崔博), Liu-Jie Xu(徐流杰), Le Zong(宗乐), Chuan Xu(徐川), En-Gang Fu(付恩刚), Xiao-Song Zhou(周晓松), Xing-Gui Long(龙兴贵), Shu-Ming Peng(彭述明), Shi-Zhong Wei(魏世忠), and Hua-Hai Shen(申华海). Microstructure and hardening effect of pure tungsten and ZrO2 strengthened tungsten under carbon ion irradiation at 700℃[J]. 中国物理B, 2022, 31(9): 96102-096102. |
[13] |
Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)†, and Yonghe Chen(陈永和)‡. Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs[J]. 中国物理B, 2022, 31(9): 97307-097307. |
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Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401. |
[15] |
Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li2S and Li3PS4 with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203. |