Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

doi:10.1088/1674-1056/24/5/056103

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 56103-056103.doi: 10.1088/1674-1056/24/5/056103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

雷志锋^{a b}, 郭红霞^c, 曾畅^a, 陈辉^a, 王远声^a, 张战刚^a

a Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411100, China;
b Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510000, China;
c Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2014-07-15 修回日期:2014-12-10 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61204112).

Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

Lei Zhi-Feng (雷志锋)^{a b}, Guo Hong-Xia (郭红霞)^c, Zeng Chang (曾畅)^a, Chen Hui (陈辉)^a, Wang Yuan-Sheng (王远声)^a, Zhang Zhan-Gang (张战刚)^a

a Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411100, China;
b Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510000, China;
c Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2014-07-15 Revised:2014-12-10 Online:2015-05-05 Published:2015-05-05
Contact: Guo Hong-Xia E-mail:leizf@ceprei.com
About author:61.80.Jh; 73.61.Ey; 73.40.Kp
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61204112).

摘要/Abstract

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated by 256 MeV ¹²⁷I ions with a fluence up to 1× 10¹⁰ ions/cm² at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current I_d and the gate current I_g increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.

关键词: GaN, HEMTs, irradiation, heavy ions

Abstract:

Key words: GaN, HEMTs, irradiation, heavy ions

中图分类号: (Ion radiation effects)

61.80.Jh

73.61.Ey (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

雷志锋, 郭红霞, 曾畅, 陈辉, 王远声, 张战刚. Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs[J]. 中国物理B, 2015, 24(5): 56103-056103.

Lei Zhi-Feng (雷志锋), Guo Hong-Xia (郭红霞), Zeng Chang (曾畅), Chen Hui (陈辉), Wang Yuan-Sheng (王远声), Zhang Zhan-Gang (张战刚). Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs[J]. Chin. Phys. B, 2015, 24(5): 56103-056103.

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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

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