中国物理B ›› 2014, Vol. 23 ›› Issue (12): 128102-128102.doi: 10.1088/1674-1056/23/12/128102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

黄杰a, 黎明b, 邓泽华b, 刘纪美b   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • 收稿日期:2014-03-06 修回日期:2014-07-31 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:

    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2013B004), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).

Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

Huang Jie (黄杰)a, Li Ming (黎明)b, Tang Chak-Wah (邓泽华)b, Lau Kei-May (刘纪美)b   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Received:2014-03-06 Revised:2014-07-31 Online:2014-12-15 Published:2014-12-15
  • Contact: Huang Jie, Li Ming E-mail:jiehuang@swu.edu.cn;eeliming@sina.com
  • Supported by:

    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2013B004), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).

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摘要：

High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal–organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (gm) of 247 mS/mm. The current gain cutoff frequency fT and maximum oscillation frequency fMAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the fT and fMAX is 50% and 52% higher, respectively.

关键词: GaN, HEMTs, S/D (S/D) regrowth, MOCVD

Abstract:

High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal–organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (gm) of 247 mS/mm. The current gain cutoff frequency fT and maximum oscillation frequency fMAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the fT and fMAX is 50% and 52% higher, respectively.

Key words: GaN, HEMTs, S/D (S/D) regrowth, MOCVD

中图分类号:  (III-V semiconductors)

  • 81.05.Ea