L g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n +-GaN layer by MOCVD
黄杰, 黎明, 邓泽华, 刘纪美
L g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n +-GaN layer by MOCVD
Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美)
中国物理B . 2014, (12): 128102 -128102 .  DOI: 10.1088/1674-1056/23/12/128102