中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118801-118801.doi: 10.1088/1674-1056/23/11/118801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

沈泽南, 夏洋, 刘邦武, 刘金虎, 李超波, 李勇滔   

  1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2014-03-05 修回日期:2014-05-29 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61106060 and 61274059) and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Shen Ze-Nan (沈泽南), Xia Yang (夏洋), Liu Bang-Wu (刘邦武), Liu Jin-Hu (刘金虎), Li Chao-Bo (李超波), Li Yong-Tao (李勇滔)   

  1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2014-03-05 Revised:2014-05-29 Online:2014-11-15 Published:2014-11-15
  • Contact: Liu Bang-Wu E-mail:liubangwu@ime.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61106060 and 61274059) and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

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摘要：

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation (PⅢ) technique. The non-uniformity of emitter doping is lower than 5%. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-nm shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

关键词: solar cells, plasma immersion ion implantation, conformal doping, black silicon

Abstract:

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation (PⅢ) technique. The non-uniformity of emitter doping is lower than 5%. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-nm shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

Key words: solar cells, plasma immersion ion implantation, conformal doping, black silicon

中图分类号:  (Solar cells (photovoltaics))

  • 88.40.H-
85.40.Ry (Impurity doping, diffusion and ion implantation technology) 52.77.Dq (Plasma-based ion implantation and deposition) 73.63.-b (Electronic transport in nanoscale materials and structures)