中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118401-118401.doi: 10.1088/1674-1056/23/11/118401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Threshold flux-controlled memristor model and its equivalent circuit implementation

武花干a, 包伯成b, 陈墨b   

  1. a School of Eelctronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
    b School of Information Science and Engineering, Changzhou University, Changzhou 213164, China
  • 收稿日期:2014-03-25 修回日期:2014-04-23 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 51277017) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012583).

Threshold flux-controlled memristor model and its equivalent circuit implementation

Wu Hua-Gan (武花干)a, Bao Bo-Cheng (包伯成)b, Chen Mo (陈墨)b   

  1. a School of Eelctronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
    b School of Information Science and Engineering, Changzhou University, Changzhou 213164, China
  • Received:2014-03-25 Revised:2014-04-23 Online:2014-11-15 Published:2014-11-15
  • Contact: Bao Bo-Cheng E-mail:mervinbao@126.com
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 51277017) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012583).

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摘要：

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.

关键词: memristor, window function, equivalent circuit, experiment

Abstract:

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.

Key words: memristor, window function, equivalent circuit, experiment

中图分类号:  (Circuit theory)

  • 84.30.Bv
84.30.-r (Electronic circuits) 05.45.-a (Nonlinear dynamics and chaos)