›› 2014, Vol. 23 ›› Issue (7): 76103-076103.doi: 10.1088/1674-1056/23/7/076103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates

王党朝a, 张玉明b   

  1. a School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang 712000, China;
    b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2014-02-10 修回日期:2014-03-04 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the Key Specific Projects in the National Science & Technology Program, China (Grant No. 2011ZX02707), the Key Research Foundation from the Ministry of Education of China (Grant No. JY10000925016), the Specialized Research Fund from Xianyang Normal University, China (Grant Nos. 13XSYK010 and 201302026).

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates

Wang Dang-Chao (王党朝)a, Zhang Yu-Ming (张玉明)b   

  1. a School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang 712000, China;
    b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2014-02-10 Revised:2014-03-04 Online:2014-07-15 Published:2014-07-15
  • Contact: Wang Dang-Chao E-mail:wangdangchao@yeah.net
  • About author:81.05.ue; 78.30.-j; 61.48.Gh
  • Supported by:
    Project supported by the Key Specific Projects in the National Science & Technology Program, China (Grant No. 2011ZX02707), the Key Research Foundation from the Ministry of Education of China (Grant No. JY10000925016), the Specialized Research Fund from Xianyang Normal University, China (Grant Nos. 13XSYK010 and 201302026).

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摘要： We produced epitaxial graphene under a moderate pressure of 4 mbar (about 400 Pa) at temperature 1600 ℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC (0001) substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.

关键词: SiC substrate, graphene, epitaxial graphene

Abstract: We produced epitaxial graphene under a moderate pressure of 4 mbar (about 400 Pa) at temperature 1600 ℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC (0001) substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.

Key words: SiC substrate, graphene, epitaxial graphene

中图分类号:  (Graphene)

  • 81.05.ue
78.30.-j (Infrared and Raman spectra) 61.48.Gh (Structure of graphene)