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Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates
王党朝, 张玉明
Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates
Wang Dang-Chao (王党朝), Zhang Yu-Ming (张玉明)
Chin. Phys. B . 2014, (
7
): 76103 -076103 . DOI: 10.1088/1674-1056/23/7/076103