中国物理B ›› 2014, Vol. 23 ›› Issue (6): 66804-066804.doi: 10.1088/1674-1056/23/6/066804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Sputtering pressure influence on growth morphology, surface roughness, and electrical resistivity for strong anisotropy beryllium film

罗炳池a b, 李恺a b, 康晓丽a, 张吉强a, 何玉丹a, 罗江山a, 吴卫东a b, 唐永建a   

  1. a Research Center of Laser Fusion, ChinaAcademy of Engineering Physics, Mianyang 621900, China;
    b Science and Technology on Plasma Physics Laboratory, Mianyang 621900, China
  • 收稿日期:2013-09-27 修回日期:2013-12-12 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204280).

Sputtering pressure influence on growth morphology, surface roughness, and electrical resistivity for strong anisotropy beryllium film

Luo Bing-Chi (罗炳池)a b, Li Kai (李恺)a b, Kang Xiao-Li (康晓丽)a, Zhang Ji-Qiang (张吉强)a, He Yu-Dan (何玉丹)a, Luo Jiang-Shan (罗江山)a, Wu Wei-Dong (吴卫东)a b, Tang Yong-Jian (唐永建)a   

  1. a Research Center of Laser Fusion, ChinaAcademy of Engineering Physics, Mianyang 621900, China;
    b Science and Technology on Plasma Physics Laboratory, Mianyang 621900, China
  • Received:2013-09-27 Revised:2013-12-12 Online:2014-06-15 Published:2014-06-15
  • Contact: Luo Jiang-Shan E-mail:jiangshanluo@caep.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204280).

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摘要： The strong anisotropy beryllium (Be) films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the (101) crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p < 0.8 Pa, while it increases drastically at p > 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 uΩ·m to 2.7 uΩ·m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.

关键词: magnetron sputtering, growth morphology, Be films, electrical resistivity

Abstract: The strong anisotropy beryllium (Be) films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the (101) crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p < 0.8 Pa, while it increases drastically at p > 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 uΩ·m to 2.7 uΩ·m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.

Key words: magnetron sputtering, growth morphology, Be films, electrical resistivity

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.J- (Morphology of films) 68.55.Nq (Composition and phase identification)