中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57301-057301.doi: 10.1088/1674-1056/23/5/057301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

廖雪阳a b, 张凯b, 曾畅a, 郑雪峰b, 恩云飞a, 来萍a, 郝跃b   

  1. a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, the 5th Electronics Research Instituteof the Ministry of Industry and Information Technology, Guangzhou 510610, China;
    b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-04-25 修回日期:2013-10-23 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Liao Xue-Yang (廖雪阳)a b, Zhang Kai (张凯)b, Zeng Chang (曾畅)a, Zheng Xue-Feng (郑雪峰)b, En Yun-Fei (恩云飞)a, Lai Ping (来萍)a, Hao Yue (郝跃)b   

  1. a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, the 5th Electronics Research Instituteof the Ministry of Industry and Information Technology, Guangzhou 510610, China;
    b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2013-04-25 Revised:2013-10-23 Online:2014-05-15 Published:2014-05-15
  • Contact: Liao Xue-Yang E-mail:vicki_216@163.com
  • About author:73.20.-r; 73.20.At; 73.40.Kp; 73.40.Qv
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

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摘要： Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

关键词: Al2O3/AlGaN/GaN, interface trap states, conductance, capacitance

Abstract: Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

Key words: Al2O3/AlGaN/GaN, interface trap states, conductance, capacitance

中图分类号:  (Electron states at surfaces and interfaces)

  • 73.20.-r
73.20.At (Surface states, band structure, electron density of states) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))