Interface states in Al
2O
3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique
廖雪阳, 张凯, 曾畅, 郑雪峰, 恩云飞, 来萍, 郝跃
Interface states in Al
2O
3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃)
中国物理B
.
2014, (5): 57301
-057301
.
DOI: 10.1088/1674-1056/23/5/057301