中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38404-038404.doi: 10.1088/1674-1056/23/3/038404
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
黄达a b, 吴俊杰b, 唐玉华b
Huang Da (黄达)a b, Wu Jun-Jie (吴俊杰)b, Tang Yu-Hua (唐玉华)b
摘要: With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.
中图分类号: (Passive circuit components)