High-mobility germanium p-MOSFETs by using HCl and (NH
4)
2S surface passivation
薛百清, 王盛凯, 韩乐, 常虎东, 孙兵, 赵威, 刘洪刚
High-mobility germanium p-MOSFETs by using HCl and (NH
4)
2S surface passivation
Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚)
中国物理B
.
2013, (10): 107302
-107302
.
DOI: 10.1088/1674-1056/22/10/107302