Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

doi:10.1088/1674-1056/22/8/086802

中国物理B ›› 2013, Vol. 22 ›› Issue (8): 86802-086802.doi: 10.1088/1674-1056/22/8/086802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

刘兴昉, 孙国胜, 刘斌, 闫果果, 关敏, 张杨, 张峰, 董林, 郑柳, 刘胜北, 田丽欣, 王雷, 赵万顺, 曾一平

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2012-12-30 修回日期:2013-03-07 出版日期:2013-06-27 发布日期:2013-06-27
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61274007) and the Beijing Natural Science Foundation, China (Grant No. 4132074).

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2012-12-30 Revised:2013-03-07 Online:2013-06-27 Published:2013-06-27
Contact: Liu Xing-Fang E-mail:liuxf@mail.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61274007) and the Beijing Natural Science Foundation, China (Grant No. 4132074).

摘要/Abstract

摘要： We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ+ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.

关键词: SiC, wurtzite, zinc blende, nanofilm

Abstract: We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ+ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.

Key words: SiC, wurtzite, zinc blende, nanofilm

中图分类号: (Thin film structure and morphology)

68.55.-a

71.20.Nr (Semiconductor compounds) 81.07.Bc (Nanocrystalline materials) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

刘兴昉, 孙国胜, 刘斌, 闫果果, 关敏, 张杨, 张峰, 董林, 郑柳, 刘胜北, 田丽欣, 王雷, 赵万顺, 曾一平. Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates[J]. 中国物理B, 2013, 22(8): 86802-086802.

Liu Xing-Fang (刘兴昉), Sun Guo-Sheng (孙国胜), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Guan Min (关敏), Zhang Yang (张杨), Zhang Feng (张峰), Dong Lin (董林), Zheng Liu (郑柳), Liu Sheng-Bei (刘胜北), Tian Li-Xin (田丽欣), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Zeng Yi-Ping (曾一平). Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates[J]. Chin. Phys. B, 2013, 22(8): 86802-086802.

参考文献 31

[1]	Kojima K, Okumura H, Kuroda S and Arai K 2004 J. Crystal Growth 269 367
[2]	Liu K X, Stahlbush R E, Lew K K, Myers-Ward R L, Vanmil B L, Gaskill K D and Eddy C R 2008 J. Electron. Mater. 37 730
[3]	Sun G S, Liu X F, Wu H L, Yan G G, Dong L, Zheng L, Zhao W S, Wang L, Zeng Y P, Li X G and Wang Z G 2011 Chin. Phys. B 20 033301
[4]	Sun J W, Ivanov I G, Liljedahl R, Yakimova R and Syvajarvi M 2012 Appl. Phys. Lett. 100 252101
[5]	Saito E, Filimonov S and Suemitsu M 2010 Mater. Sci. Forum. 645-648 147
[6]	Das H, Melnychuk G and Koshka Y 2010 J. Crystal Growth 312 1912
[7]	Kotamraju S, Krishnan B, Melnychuk G and Koshka Y 2010 J. Crystal Growth 312 645
[8]	Kim B, Coy J, Kim S and Capano M 2009 J. Electron. Mater. 38 581
[9]	Teker K, Jacob C, Chung J and Hong M H 2000 Thin Solid Films 371 53
[10]	Steckl A J, Yuan C, Li J P and Loboda M J 1993 Appl. Phys. Lett. 63 3347
[11]	Cloitre T, Moreaud N, Vicente P, Sadowski M L and Aulombard R L 2001 Mater. Sci. Forum. 353-356 159
[12]	Li W, Dimitrijev S, Jisheng H, Iacopi A, Hold L, Tanner P and Harrison H B 2011 Thin Solid Films 519 6443
[13]	Liu X F, Sun G S, Zhao Y M, Ning J, Li J Y, Wang L, Zhao W S, Luo M C and Li J M 2007 Mater. Sci. Forum 556-557 109
[14]	Hassan J, Bergman J P, Henry A and Janzen E 2008 J. Crystal Growth 310 4424
[15]	Hori T, Danno K and Kimoto T 2007 J. Crystal Growth 306 297
[16]	Leone S, Pedersen H, Henry A, Kordina O and Janzen E 2009 J. Crystal Growth 312 24
[17]	Li J, Batoni P and Tsu R 2010 Thin Solid Films 518 1658
[18]	Habermehl S, Rodriguez M and Simmons B 2012 J. Appl. Phys. 112 013535
[19]	Sun G S, Liu X F, Wang L, Zhao W S, Yang T, Wu H L, Yan G G, Zhao Y M, Ning J, Zeng Y P and Li J M 2010 Chin. Phys. B 19 088101
[20]	Zhao Y M, Sun G S, Ning J, Liu X F, Zhao W S, Wang L and Li J M 2008 Chin. Phys. Lett. 25 2269
[21]	Joyce H J, Wong-Leung J, Gao Q, Tan H H and Jagadish C 2010 Nano Lett. 10 908
[22]	Verheijen M A, Algra R E, Borgstrom M T, Immink G, Sourty E, van Enckevort W J P, Vlieg E and Bakkers E P A M 2007 Nano Lett. 7 3051
[23]	Intarasiri S, Hallen A, Lu J, Jensen J, Yu L D, Bertilsson K, Wolborski M, Singkarat S and Possnert G 2007 Appl. Surf. Sci. 253 4836
[24]	Zhang X, Li L, Skowronski M, Sumakeris J J, Paisley M J and O'Loughlin M J 2009 J. Appl. Phys. 105 123529
[25]	Nishimura T, Satoh M, Jinushi T, Saitou Y and Nakamura T 2012 Nucl. Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. Atoms 272 422
[26]	Lebedev A A 2006 Semicond. Sci. Technol. 21 R17
[27]	Nakashima S and Harima H 1997 Phys. Status Solidi A: Appl. Res. 162 39
[28]	Temple P A and Hathaway C E 1973 Phys. Rev. B 7 3685
[29]	Rohmfeld S, Hundhausen M, Ley L, Zorman C A and Mehregany M 2002 J. Appl. Phys. 91 1113
[30]	Perova T S, Wasyluk J, Kukushkin S A, Osipov A V, Feoktistov N A and Grudinkin S A 2010 Nanoscale Res. Lett. 5 1507
[31]	Fissel A 2003 Phys. Rep. 379 149

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 31

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Keyi Peng(彭珂依), Jing Yue(岳靖), Wen Zhang(张文), and Jian Li(李剑). Meshfree-based physics-informed neural networks for the unsteady Oseen equations[J]. 中国物理B, 2023, 32(4): 40208-040208.
[2]	Jinlong Hu(胡锦龙), Yuting Zuo(左钰婷), Yuzhou Hao(郝昱州), Guoyu Shu(舒国钰), Yang Wang(王洋), Minxuan Feng(冯敏轩), Xuejie Li(李雪洁), Xiaoying Wang(王晓莹), Jun Sun(孙军), Xiangdong Ding(丁向东), Zhibin Gao(高志斌), Guimei Zhu(朱桂妹), Baowen Li(李保文). Prediction of lattice thermal conductivity with two-stage interpretable machine learning[J]. 中国物理B, 2023, 32(4): 46301-046301.
[3]	Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂). SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current[J]. 中国物理B, 2023, 32(4): 47702-047702.
[4]	Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). A 4H-SiC trench IGBT with controllable hole-extracting path for low loss[J]. 中国物理B, 2023, 32(4): 48503-048503.
[5]	Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502.
[6]	Chun-Sheng Hu(胡春生), Yun-Jing Wu(仵允京), Yuan-Shuo Liu(刘元硕), Shuai Fu(傅帅),Xiao-Ning Cui(崔晓宁), Yi-Hao Wang(王易昊), and Chang-Wen Zhang(张昌文). Single-layer intrinsic 2H-phase LuX₂ (X = Cl, Br, I) with large valley polarization and anomalous valley Hall effect[J]. 中国物理B, 2023, 32(3): 37306-037306.
[7]	Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏). High performance SiC trench-type MOSFET with an integrated MOS-channel diode[J]. 中国物理B, 2023, 32(2): 28503-028503.
[8]	Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504.
[9]	Xin Wang(王鑫), Xiang-Qin Li(李香琴), Tian-Qing Liu(刘天庆), Li-Dan Zhao(赵丽丹), Ke-Dong Song(宋克东), and Dan Ge(葛丹). Molecular dynamics simulation of interaction between nanorod and phospholipid molecules bilayer[J]. 中国物理B, 2023, 32(1): 16201-016201.
[10]	Xiaojie Guo(郭晓杰), Lijuan Chen(陈丽娟), Zeliang Gao(高泽亮), Xin Yin(尹鑫), and Xutang Tao(陶绪堂). Definition and expression of non-symmetric physical properties in space for uniaxial crystals[J]. 中国物理B, 2022, 31(9): 96103-096103.
[11]	Qiang-Tao Sui(随强涛) and Xiang-Gang Qui(邱祥冈). Josephson vortices and intrinsic Josephson junctions in the layered iron-based superconductor Ca₁₀(Pt₃As₈)((Fe_0.9Pt_0.1)₂As₂)₅[J]. 中国物理B, 2022, 31(9): 97403-097403.
[12]	Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502.
[13]	Jia-Rong Ye(叶家容), Wei-Shen Huang(黄伟深), and Xiu-Jun Fu(傅秀军). Substitutions of vertex configuration of Ammann-Beenker tiling in framework of Ammann lines[J]. 中国物理B, 2022, 31(8): 86101-086101.
[14]	Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501.
[15]	Boxue Zhang(张博学), Qingya Li(李青铔), Xiao Zhang(张笑), and Ching Hua Lee(李庆华). Real non-Hermitian energy spectra without any symmetry[J]. 中国物理B, 2022, 31(7): 70308-070308.