中国物理B ›› 2013, Vol. 22 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/22/7/078501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Lead zirconate titanate behaviors in LDMOS

翟亚红, 李威, 李平, 李俊宏, 胡滨, 霍伟荣, 范雪, 王刚   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-12-19 修回日期:2013-02-04 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 50772019) and the National Natural Science Foundation of China (Grant No. 61204084).

Lead zirconate titanate behaviors in LDMOS

Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-12-19 Revised:2013-02-04 Online:2013-06-01 Published:2013-06-01
  • Contact: Zhai Ya-Hong E-mail:yhzhai@uestc.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 50772019) and the National Natural Science Foundation of China (Grant No. 61204084).

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摘要： The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ± 10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

关键词: laterally diffused metal oxide semiconductor (LDMOS), lead zirconate titanate, memory behavior, retention

Abstract: The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ± 10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

Key words: laterally diffused metal oxide semiconductor (LDMOS), lead zirconate titanate, memory behavior, retention

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 77.55.df (For silicon electronics)