中国物理B ›› 2013, Vol. 22 ›› Issue (7): 78402-078402.doi: 10.1088/1674-1056/22/7/078402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

陈鑫, 赵璧君, 任志伟, 童金辉, 王幸福, 卓祥景, 章俊, 李丹伟, 易翰翔, 李述体   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2013-02-01 修回日期:2013-03-04 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体)   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2013-02-01 Revised:2013-03-04 Online:2013-06-01 Published:2013-06-01
  • Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

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摘要： InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

关键词: metal organic chemical vapor deposition (MOCVD), GaN based solar cells, stepped-thickness quantum wells

Abstract: InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

Key words: metal organic chemical vapor deposition (MOCVD), GaN based solar cells, stepped-thickness quantum wells

中图分类号:  (Photoelectric conversion)

  • 84.60.Jt
85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling)