Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 40701-040701.doi: 10.1088/1674-1056/22/4/040701

• GENERAL • 上一篇    下一篇

Nb5N6 microbolometer array for terahertz detection

涂学凑, 康琳, 刘新华, 毛庆凯, 万超, 陈健, 金飚兵, 吉争鸣, 许伟伟, 吴培亨   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2012-08-09 修回日期:2012-09-28 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00107) and the National High-Technology Research Development Program of China (Grant No. 2011AA010204).

Nb5N6 microbolometer array for terahertz detection

Tu Xue-Cou (涂学凑), Kang Lin (康琳), Liu Xin-Hua (刘新华), Mao Qing-Kai (毛庆凯), Wan Chao (万超), Chen Jian (陈健), Jin Biao-Bing (金飚兵), Ji Zheng-Ming (吉争鸣), Xu Wei-Wei (许伟伟), Wu Pei-Heng (吴培亨)   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2012-08-09 Revised:2012-09-28 Online:2013-03-01 Published:2013-03-01
  • Contact: Kang Lin E-mail:kanglin@nju.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00107) and the National High-Technology Research Development Program of China (Grant No. 2011AA010204).

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摘要： A novel room-temperature microbolometer array chip consisting of an Nb5N6 thin film microbridge and a dipole planar antenna, which is used as a terahertz (THz) detector is described in this paper. Due to the high temperature coefficient of the resistance, which is as high as -0.7% K-1, of the Nb5N6 thin film, such an antenna-coupled microbolometer is ideal for detecting signals in a frequency range from 0.22 THz to 0.33 THz. The dc responsivity, calculated from the measured I-V curve of the Nb5N6 microbolometer, is about -760 V/W at a bias current of 0.19 mA. A typical noise voltage as low as 10 nV/Hz1/2 yields a low noise equivalent power (NEP) of 1.3×10-11 W/Hz1/2 at a modulation frequency above 4 kHz, and the best RF responsivity, characterized using infrared device measuring method, is about 580 V/W, with the corresponding NEP being 1.7× 10-11 W/Hz1/2. In order to further test the performance of Nb5N6 microbolometer, we construct a quasi-optical type receiver by attaching it to the hyperhemispherical silicon lens, and the result is that the best responsivity of the receiver is up to 320 V/W. This work could offer another way to develop a large scale focal plane array in silicon with simple technique and low cost.

关键词: Nb5N6, microbolometer, responsivity, noise equivalent power

Abstract: A novel room-temperature microbolometer array chip consisting of an Nb5N6 thin film microbridge and a dipole planar antenna, which is used as a terahertz (THz) detector is described in this paper. Due to the high temperature coefficient of the resistance, which is as high as -0.7% K-1, of the Nb5N6 thin film, such an antenna-coupled microbolometer is ideal for detecting signals in a frequency range from 0.22 THz to 0.33 THz. The dc responsivity, calculated from the measured I-V curve of the Nb5N6 microbolometer, is about -760 V/W at a bias current of 0.19 mA. A typical noise voltage as low as 10 nV/Hz1/2 yields a low noise equivalent power (NEP) of 1.3×10-11 W/Hz1/2 at a modulation frequency above 4 kHz, and the best RF responsivity, characterized using infrared device measuring method, is about 580 V/W, with the corresponding NEP being 1.7× 10-11 W/Hz1/2. In order to further test the performance of Nb5N6 microbolometer, we construct a quasi-optical type receiver by attaching it to the hyperhemispherical silicon lens, and the result is that the best responsivity of the receiver is up to 320 V/W. This work could offer another way to develop a large scale focal plane array in silicon with simple technique and low cost.

Key words: Nb5N6, microbolometer, responsivity, noise equivalent power

中图分类号:  (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)

  • 07.57.Kp
07.57.-c (Infrared, submillimeter wave, microwave and radiowave instruments and equipment)