Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

doi:10.1088/1674-1056/21/4/047802

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 47802-047802.doi: 10.1088/1674-1056/21/4/047802

董林¹,孙国胜¹ ² ³,郑柳¹,刘兴昉¹,张峰¹,闫果果¹,赵万顺¹,王雷¹,李锡光³,王占国²

收稿日期:2011-08-16 修回日期:2011-10-11 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 董林,donglin09@semi.ac.cn E-mail:donglin09@semi.ac.cn

Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

Dong Lin(董林)^a)^†, Sun Guo-Sheng(孙国胜)^a)b)c), Zheng Liu(郑柳)^a), Liu Xing-Fang(刘兴昉)^a), Zhang Feng(张峰)^a), Yan Guo-Guo(闫果果)^a), Zhao Wan-Shun(赵万顺)^a), Wang Lei(王雷)^a), Li Xi-Guang(李锡光)^c), and Wang Zhan-Guo(王占国)^b)

a. Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b. Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
c. Dongguan Tianyu Semiconductor Inc., Dongguan 523000, China

Received:2011-08-16 Revised:2011-10-11 Online:2012-02-29 Published:2012-02-29
Contact: Dong Lin,donglin09@semi.ac.cn E-mail:donglin09@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grand No. 60876003) and the Program of 2011 (2nd) Innovative Research Teams and Leading Talents in Guangdong Province of China.

摘要/Abstract

Abstract: The infrared reflectance spectra of both 4H-SiC substrates and epilayers are measured in a wave number range from 400 cm^-1 to 4000 cm^-1 using a Fourier-transform spectrometer. The thicknesses of the 4H-SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H-SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H-SiC electrical properties in the 30 cm^-1-4000 cm^-1 and 400 cm^-1-4000 cm^-1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region (30 cm^-1-4000 cm^-1). These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H-SiC wafers.

Key words: 4H-SiC, infrared reflectance, epilayer thickness, electrical properties

中图分类号: (Infrared and Raman spectra)

78.30.-j

71.20.Nr (Semiconductor compounds)

董林, 孙国胜, 郑柳, 刘兴昉, 张峰, 闫果果, 赵万顺, 王雷, 李锡光, 王占国. [J]. 中国物理B, 2012, 21(4): 47802-047802.

Dong Lin(董林), Sun Guo-Sheng(孙国胜), Zheng Liu(郑柳), Liu Xing-Fang(刘兴昉), Zhang Feng(张峰), Yan Guo-Guo(闫果果), Zhao Wan-Shun(赵万顺), Wang Lei(王雷), Li Xi-Guang(李锡光), and Wang Zhan-Guo(王占国) . Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy[J]. Chin. Phys. B, 2012, 21(4): 47802-047802.

参考文献 15

[1]	Deng X C, Zhang B, Zhang Y R, Wang Y and Li Z J 2011 Chin. Phys. B 20 017304
[2]	Sun G S, Liu X F, Wang L, Zhao W S, Yang T, Wu H L, Yan G G, Zhao Y M, Ning J, Zeng Y P and Li J M 2010 Chin. Phys. B 19 088101
[3]	Zhao Y M, Sun G S, Li J Y, Liu X F, Wang L, Zhao W S and Li J M 2007 Chin. Phys. Lett. 24 1753
[4]	Harima H, Nakashima S and Uemura T 1995 J. Appl. Phys. 78 1996
[5]	Sun G S, Liu X F, Wu H L, Yan G G, Dong L, Zheng L, Zhao W S, Wang L, Zeng Y P, Li X G and Wang Z G 2011 Chin. Phys. B 20 033301
[6]	Narita K, Hijikata Y, Yaguchi H, Yoshida S and Nakashima S 2004 Jpn. J. Appl. Phys. 43 5151
[7]	Oishi S, Hijikata Y, Yaguchi H and Yoshida S 2006 Jpn. J. Appl. Phys. 45 L1226
[8]	Nakashima S and Harima H 2004 J. Appl. Phys. 95 3541
[9]	Born M and Wolf E 1999 Principles of Optics 7th edn. (Cambridge: Cambridge University Press) p. 44
[10]	Lekner J 1987 Theory of Reflection (Dordrecht: Martinus Nijhoff) p. 144
[11]	Azzam R M A and Bashara N M 1977 Ellipsometry and Polarized Light (New York: North-Holland) p. 358
[12]	Tiwald T E, Woollam J A, Zollner S, Christiansen J, Gregory R B, Wetteroth T, Wilson S R and Powell A R 1999 Phys. Rev. B 60 11464
[13]	Son N T, Chen W M, Kordina O, Konstantinov A O, Monemar B, Janzen E, Hofman D M, Volm D, Drechsler M and Meyer B K 1995 Appl. Phys. Lett. 66 1074
[14]	Pernot J, Contreras S, Camassel J, Robert J L, Zawadzki W, Neyret E and Cioccio L D 2000 Appl. Phys. Lett. 77 4359
[15]	Chafai M, Jaouhari A, Torres A, Anton R, Martin E, Jimenez J and Mitchel W C 2001 J. Appl. Phys. 90 5211

Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

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