Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

doi:10.1088/1674-1056/21/4/046801

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 46801-046801.doi: 10.1088/1674-1056/21/4/046801

郝昕¹,陈远富¹,李萍剑¹,王泽高¹,刘竞博¹,贺加瑞¹,樊睿¹,孙继荣²,张万里¹,李言荣¹

收稿日期:2011-11-24 修回日期:2011-12-23 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 陈远富,yfchen@uestc.edu.cn;李萍剑,lipingjian@gmail.com E-mail:yfchen@uestc.edu.cn;lipingjian@gmail.com

Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

Hao Xin(郝昕)^a), Chen Yuan-Fu(陈远富)^a)†, Li Ping-Jian(李萍剑)^{a) ‡}, Wang Ze-Gao(王泽高)^a), Liu Jing-Bo(刘竞博)^a), He Jia-Rui(贺加瑞)^a), Fan Rui(樊睿)^a), Sun Ji-Rong(孙继荣)^b), Zhang Wan-Li(张万里)^a), and Li Yan-Rong(李言荣)^a)

a. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
b. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2011-11-24 Revised:2011-12-23 Online:2012-02-29 Published:2012-02-29
Contact: Chen Yuan-Fu,yfchen@uestc.edu.cn;Li Ping-Jian,lipingjian@gmail.com E-mail:yfchen@uestc.edu.cn;lipingjian@gmail.com
Supported by:
Project supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0291), the Fundamental Research Funds for the Central Universities (Grant Nos. ZYGX2009X005 and ZYGX2010J031), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the National Natural Science Foundation of China (Grant Nos. 50832007 and 11074285).

摘要/Abstract

Abstract: Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H-SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.

Key words: epitaxial graphene, thickness, morphology, graphitization temperature

中图分类号: (Morphology of films)

68.55.J-

郝昕, 陈远富, 李萍剑, 王泽高, 刘竞博, 贺加瑞, 樊睿, 孙继荣, 张万里, 李言荣. [J]. 中国物理B, 2012, 21(4): 46801-046801.

Hao Xin(郝昕), Chen Yuan-Fu(陈远富), Li Ping-Jian(李萍剑), Wang Ze-Gao(王泽高), Liu Jing-Bo(刘竞博), He Jia-Rui(贺加瑞), Fan Rui(樊睿), Sun Ji-Rong(孙继荣), Zhang Wan-Li(张万里), and Li Yan-Rong(李言荣) . Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers[J]. Chin. Phys. B, 2012, 21(4): 46801-046801.

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Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

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