中国物理B ›› 2015, Vol. 24 ›› Issue (6): 66801-066801.doi: 10.1088/1674-1056/24/6/066801
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
张振营a, 陈芬a, 陆顺斌b, 王永辉a, 沈祥c, 戴世勋c, 聂秋华c
Zhang Zhen-Ying (张振营)a, Chen Fen (陈芬)a, Lu Shun-Bin (陆顺斌)b, Wang Yong-Hui (王永辉)a, Shen Xiang (沈祥)c, Dai Shi-Xun (戴世勋)c, Nie Qiu-Hua (聂秋华)c
摘要: Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb–Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge–Se films have a good prospect in the applications of nonlinear optical devices.
中图分类号: (Morphology of films)