中国物理B ›› 2012, Vol. 21 ›› Issue (2): 28401-028401.doi: 10.1088/1674-1056/21/2/028401
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朱樟明,刘术彬
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Zhu Zhang-Ming(朱樟明)† and Liu Shu-Bin(刘术彬)
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Abstract: According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance-inductance-capacitance (RLC) interconnect considering effect of thermal profile. According to the 65-nm complementary metal-oxide semiconductor (CMOS) process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation (EDA) and the design optimization for nanometer CMOS integrated circuits.
Key words: multilevel interconnects, temperature distribution, RLC crosstalk
中图分类号: (Electronic circuits)
朱樟明, 刘术彬. [J]. 中国物理B, 2012, 21(2): 28401-028401.
Zhu Zhang-Ming(朱樟明) and Liu Shu-Bin(刘术彬) . An RLC interconnect analyzable crosstalk model considering self-heating effect[J]. Chin. Phys. B, 2012, 21(2): 28401-028401.
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链接本文: https://cpb.iphy.ac.cn/CN/10.1088/1674-1056/21/2/028401
https://cpb.iphy.ac.cn/CN/Y2012/V21/I2/28401
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