中国物理B ›› 2012, Vol. 21 ›› Issue (2): 28401-028401.doi: 10.1088/1674-1056/21/2/028401

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朱樟明,刘术彬   

  • 收稿日期:2011-07-08 修回日期:2011-09-21 出版日期:2012-01-30 发布日期:2012-01-30
  • 通讯作者: 朱樟明,zmyh@263.net E-mail:zmyh@263.net

An RLC interconnect analyzable crosstalk model considering self-heating effect

Zhu Zhang-Ming(朱樟明) and Liu Shu-Bin(刘术彬)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2011-07-08 Revised:2011-09-21 Online:2012-01-30 Published:2012-01-30
  • Contact: Zhu Zhang-Ming,zmyh@263.net E-mail:zmyh@263.net
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60971066).

Abstract: According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance-inductance-capacitance (RLC) interconnect considering effect of thermal profile. According to the 65-nm complementary metal-oxide semiconductor (CMOS) process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation (EDA) and the design optimization for nanometer CMOS integrated circuits.

Key words: multilevel interconnects, temperature distribution, RLC crosstalk

中图分类号:  (Electronic circuits)

  • 84.30.-r
84.30.Bv (Circuit theory)