The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

doi:10.1088/1674-1056/22/6/068401

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68401-068401.doi: 10.1088/1674-1056/22/6/068401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

包伯成, 冯霏, 董伟, 潘赛虎

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China

收稿日期:2012-09-28 修回日期:2012-11-27 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51277017) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012583).

The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

Bao Bo-Cheng (包伯成), Feng Fei (冯霏), Dong Wei (董伟), Pan Sai-Hu (潘赛虎)

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China

Received:2012-09-28 Revised:2012-11-27 Online:2013-05-01 Published:2013-05-01
Contact: Bao Bo-Cheng E-mail:mervinbao@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51277017) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012583).

摘要/Abstract

摘要： A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships (VCRs) between two parallel memristive circuits, i.e., parallel memristor and capacitor circuit (called as parallel MC circuit), and parallel memristor and inductor circuit (called as parallel ML circuit), are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. Equivalent circuit model of the memristor is built, upon which the circuit simulations and experimental measurements of both parallel MC circuit and parallel ML circuit are performed, of which the results verify the theoretical analysis results.

关键词: flux-controlled memristor, memristor and capacitor (MC) circuit, memristor and inductor (ML) circuit, equivalent circuit

Abstract: A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships (VCRs) between two parallel memristive circuits, i.e., parallel memristor and capacitor circuit (called as parallel MC circuit), and parallel memristor and inductor circuit (called as parallel ML circuit), are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. Equivalent circuit model of the memristor is built, upon which the circuit simulations and experimental measurements of both parallel MC circuit and parallel ML circuit are performed, of which the results verify the theoretical analysis results.

Key words: flux-controlled memristor, memristor and capacitor (MC) circuit, memristor and inductor (ML) circuit, equivalent circuit

中图分类号: (Circuit theory)

84.30.Bv

84.30.-r (Electronic circuits) 05.45.-a (Nonlinear dynamics and chaos)

包伯成, 冯霏, 董伟, 潘赛虎. The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits[J]. 中国物理B, 2013, 22(6): 68401-068401.

Bao Bo-Cheng (包伯成), Feng Fei (冯霏), Dong Wei (董伟), Pan Sai-Hu (潘赛虎). The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits[J]. Chin. Phys. B, 2013, 22(6): 68401-068401.

参考文献 18

[1]	Chua L O 1971 IEEE Trans. Circ. Theor. CT-18 507
[2]	Chua L O and Kang S M 1976 Proc. IEEE 64 209
[3]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
[4]	Pershin Y V, Fontaine S L and Di Ventra M 2009 Phys. Rev. E 80 021926
[5]	Pershin Y V and Di Ventra M 2010 Neural Networks 23 881
[6]	Shin S, Kim K and Kang S M 2011 IEEE Trans. Nanotechnol. 10 266
[7]	Bao B C, Liu Z and Xu J P 2010 Electron. Lett. 46 228
[8]	Pershin Y V and Di Ventra M 2011 Adv. Phys. 60 145
[9]	Muthuswamy B 2010 Int. J. Bifurc. Chaos 20 1335
[10]	Bao B C, Xu J P, Zhou G H, Ma Z H and Zou L 2011 Chin. Phys. B 20 120502
[11]	Iu H H C, Yu D S, Fitch A L, Sreeram V and Chen H 2011 IEEE Trans. Circ. Sys. I: Regular Papers 58 1337
[12]	Pershin Y V and Di Ventra M 2010 IEEE Trans. Circ. Sys. I: Regular Papers 57 1857
[13]	Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R and Williams R S 2010 Nature 464 873
[14]	Wey T A and Benderli S 2009 Electron. Lett. 45 1103
[15]	Zhang X, Zhou Y Z, Bi Q, Yang X H and Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese)
[16]	Song D H, Lü M F, Ren X, Li M M and Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese)
[17]	Bao B C, Liu Z and Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese)
[18]	Bao B C, Hu W, Xu J P, Liu Z and Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese)

The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 18

相关文章 14

Metrics

本文评价

推荐阅读 0

[1]	Shi-Yu Feng(冯识谕), Yong-Bo Su(苏永波), Peng Ding(丁芃), Jing-Tao Zhou(周静涛), Song-Ang Peng(彭松昂), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation[J]. 中国物理B, 2022, 31(4): 47303-047303.
[2]	孙亚宾, 李小进, 张金中, 石艳玲. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout[J]. 中国物理B, 2017, 26(9): 98502-098502.
[3]	关赫, 郭辉. An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect[J]. 中国物理B, 2017, 26(5): 58501-058501.
[4]	李小红, 周浩淼, 张秋实, 胡文文. Lumped modeling with circuit elements for nonreciprocal magnetoelectric tunable band-pass filter[J]. 中国物理B, 2016, 25(11): 117505-117505.
[5]	姚辰, 徐天鸿, 万文坚, 朱永浩, 曹俊诚. An equivalent circuit model for terahertz quantumcascade lasers: Modeling and experiments[J]. 中国物理B, 2015, 24(9): 94208-094208.
[6]	袁方, 王光义, 王晓媛. Dynamical characteristics of an HP memristor based on an equivalent circuit model in a chaotic oscillator[J]. 中国物理B, 2015, 24(6): 60506-060506.
[7]	张秋实, 朱锋杰, 周浩淼. Lumped-equivalent circuit model for multi-stage cascaded magnetoelectric dual-tunable bandpass filter[J]. 中国物理B, 2015, 24(10): 107506-107506.
[8]	樊玉伟, 李志强, 舒挺, 刘静. Efficiency and stability enhancement of a virtual cathode oscillator[J]. , 2014, 23(7): 75208-075208.
[9]	易施光, 张万辉, 艾斌, 宋经纬, 沈辉. Analysis of each branch current of serial solar cells by using an equivalent circuit model[J]. 中国物理B, 2014, 23(2): 28801-028801.
[10]	武花干, 包伯成, 陈墨. Threshold flux-controlled memristor model and its equivalent circuit implementation[J]. 中国物理B, 2014, 23(11): 118401-118401.
[11]	刘立国, 吴微微, 莫锦军, 付云起, 袁乃昌. Analysis of frequency selective surface absorbers via a novel equivalent circuit method[J]. Chin. Phys. B, 2013, 22(4): 47802-047802.
[12]	王发强, 马西奎. Transfer function modeling and analysis of the open-loop Buck converter using the fractional calculus[J]. 中国物理B, 2013, 22(3): 30506-030506.
[13]	包伯成, 许建平, 周国华, 马正华, 邹凌. Chaotic memristive circuit: equivalent circuit realization and dynamical analysis[J]. 中国物理B, 2011, 20(12): 120502-120502.
[14]	陈雨, 文玉梅, 李平. Equivalent circuit with complex physical constants and equivalent-parameters-expressed dissipation factors of piezoelectric materials[J]. 中国物理B, 2006, 15(6): 1356-1363.