中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18401-018401.doi: 10.1088/1674-1056/20/1/018401
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
朱樟明, 万达经, 杨银堂, 恩云飞
Zhu Zhang-Ming(朱樟明)†, Wan Da-Jing(万达经), Yang Yin-Tang(杨银堂), and En Yun-Fei(恩云飞)
摘要: As the feature size of the CMOS integrated circuit continues to shrink, process variations have become a key factor affecting the interconnect performance. Based on the equivalent Elmore model and the use of the polynomial chaos theory and the Galerkin method, we propose a linear statistical RCL interconnect delay model, taking into account process variations by successive application of the linear approximation method. Based on a variety of nano-CMOS process parameters, HSPICE simulation results show that the maximum error of the proposed model is less than 3.5%. The proposed model is simple, of high precision, and can be used in the analysis and design of nanometer integrated circuit interconnect systems.
中图分类号: (Electronic circuits)