A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

doi:10.1088/1674-1056/21/2/027305

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27305-027305.doi: 10.1088/1674-1056/21/2/027305

周建林¹ ²,于军胜¹,于欣格¹,蔡欣洋¹

收稿日期:2011-07-24 修回日期:2011-11-03 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 周建林,zjl4062002@163.com;于军胜,jsyu@uestc.edu.cn E-mail:zjl4062002@163.com;jsyu@uestc.edu.cn

A high mobility C₆₀ field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

Zhou Jian-Lin(周建林)^a)b)†, Yu Jun-Sheng(于军胜)^a)‡, Yu Xin-Ge(于欣格)^a), and Cai Xin-Yang(蔡欣洋)^a)

a. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
b. Department of Electronic Engineering, College of Communication and Electronics, Chongqing University, Chongqing 400044, China

Received:2011-07-24 Revised:2011-11-03 Online:2012-01-30 Published:2012-01-30
Contact: Zhou Jian-Lin,zjl4062002@163.com;Yu Jun-Sheng,jsyu@uestc.edu.cn E-mail:zjl4062002@163.com;jsyu@uestc.edu.cn
Supported by:
Project supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20100471667), the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No. 2011jjA40020), the National Natural Science Foundation of China (Grant Nos. 60736005 and 61021061), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. GGRYJJ08-05).

摘要/Abstract

Abstract: C₆₀ field-effect transistor (OFET) with a mobility as high as 5.17 cm²/V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C₆₀ film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C₆₀ film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C₆₀ film efficiently.

Key words: organic field-effect transistors, C₆₀, Bphen, passivation layer

中图分类号: (Fullerenes and related materials)

73.61.Wp

85.30.Tv (Field effect devices) 88.30.rf (Organics)

周建林, 于军胜, 于欣格, 蔡欣洋. [J]. 中国物理B, 2012, 21(2): 27305-027305.

Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋) . A high mobility C₆₀ field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes[J]. Chin. Phys. B, 2012, 21(2): 27305-027305.

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A high mobility C₆₀ field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

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