[1] |
online available: http://www.itrs.net
|
[2] |
Wong H S 2002 IBM J. RES. & DEV. bf46 2/3
|
[3] |
Haensch W, Nowak E J, Dennard R H, Solomon P M, Bryant A, Dokumaci O H, Kumar A, Wang X, Johnson J B and Fischetti M V 2006 IBM J. RES. & DEV. bf50 4/5
|
[4] |
Frank D J, Laux S E and Fischetti M V 1992 IEDM Tech. Dig. pp. 553-556
|
[5] |
Wong H S, Frank D J, Taur Y and Stork M C 1994 IEDM Tech. Dig. pp. 747-750
|
[6] |
Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T J, Bokor J and Hu C 2000 IEEE Trans. Electron Dev. bf47 2320
|
[7] |
Shin M 2007 J. Appl. Phys. bf101 024510
|
[8] |
Anantram M P and Svizhenko A 2007 IEEE Trans. Electron Dev. bf54 2100
|
[9] |
Sverdlov V, Ungersboeck E, Kosina H and Selberherr S 2008 Mat. Sci. Eng. R58 228
|
[10] |
Iafrate G J, Grubin H L and Ferry D K 1981 J. Phys. bf42 307
|
[11] |
Ferry D K and Zhou J R 1993 Phys. Rev. B bf48 7944
|
[12] |
Jin S, Fischetti M V and Tang T W 2008 Appl. Phys. Lett. bf92 082103
|
[13] |
Vasileska D, Ferry D K and Goodnick S M 2006 Handbook of Theoretical and Computational Nanotechnology 10, Chap. 1
|
[14] |
Lake R, Klimeck G, Bowen R C and Javanovic D 1997 J. Appl. Phys. bf81 7845
|
[15] |
Luisier M, Schenk A, Fichtner W and Klimeck G 2006 Phys. Rev. B bf74 205323
|
[16] |
Luisier M and Klimeck G 2009 IEEE Electron Dev. Lett. bf30 602
|
[17] |
Laux S E, Kumar A and Fischetti M V 2004 J. Appl. Phys. bf95 5545
|
[18] |
Jiang X W, Li S S, Xia J B and Wang L W 2011 J. Appl. Phys. bf109 054503
|
[19] |
Wang L W and Zunger A 1999 Phys. Rev. B bf59 15806
|
[20] |
Wang L W and Zunger A 1994 J. Phys. Chem. bf98 2158
|
[21] |
Wang L W, Franceschetti A and Zunger A 1997 Phys. Rev. Lett. bf78 2819
|
[22] |
Wood D M and Zunger A 1996 Phys. Rev. B bf53 7949
|
[23] |
Wang L W and Zunger A 1996 Phys. Rev. B bf54 11417
|
[24] |
Esseni D and Palestri P 2005 Phys. Rev. B bf72 165342
|
[25] |
VASP: Vienna ab-initio Simulation Package, http://cms.linebreak mpi.univie.ac.at/vasp/vasp/vasp.html
|
[26] |
Shimizu K, Saraya T and Hiramoto T 2010 IEEE Electron Dev. Lett. bf31 4
|
[27] |
Deng H X, Jiang X W, Li S S, Xia J B and Wang L W 2008 J. Appl. Phys. 103 124507
|
[28] |
Wu T F, Zhang H M, Wang G Y and Hu H Y 2011 Acta Phys. Sin. bf60 027305 (in Chinese)
|
[29] |
Wu H Y, Zhang H M, Song J J and Hu H Y 2011 Acta Phys. Sin. bf60 097302 (in Chinese)
|
[30] |
Wang J and Lundstrom M 2002 International Electron Device Meeting (IEDM) p. 707 http: // ieeexplore.ieee.org / xpls/abs_all.jsp?arnumber= 1175936&tag=1
|
[31] |
Kawaura H, Sakamoto T and Baba T 2000 Appl. Phys. Lett. bf76 3810
|
[32] |
Chang L and Hu C 2000 Supperlattices and Microstructures bf28 351
|
[33] |
Schenk A and Wettstein A 2002 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems p. 552 http://www.linebreak nsti.org/procs/MSM2002/11/X21.03
|
[34] |
Asenov A, Brown A R and Watling J R 2002 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems p. 490 http://www. nsti.org/procs/MSM2002/10/M41.02
|