中国物理B ›› 2011, Vol. 20 ›› Issue (7): 78402-078402.doi: 10.1088/1674-1056/20/7/078402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The p recombination layer in tunnel junctions for micromorph tandem solar cells

姚文杰, 曾湘波, 彭文博, 刘石勇, 谢小兵, 王超, 廖显伯   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2011-01-07 修回日期:2011-03-10 出版日期:2011-07-15 发布日期:2011-07-15

The p recombination layer in tunnel junctions for micromorph tandem solar cells

Yao Wen-Jie(姚文杰), Zeng Xiang-Bo(曾湘波)†, Peng Wen-Bo(彭文博), Liu Shi-Yong(刘石勇), Xie Xiao-Bing(谢小兵), Wang Chao(王超), and Liao Xian-Bo(廖显伯)   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2011-01-07 Revised:2011-03-10 Online:2011-07-15 Published:2011-07-15

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摘要： A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc= 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.

Abstract: A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc= 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.

Key words: p recombination layer, tunnel recombination junction, micromorph tandem solar cells

中图分类号:  (Photoelectric conversion)

  • 84.60.Jt
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.-c (Electronic transport in interface structures)