中国物理B ›› 2011, Vol. 20 ›› Issue (7): 78402-078402.doi: 10.1088/1674-1056/20/7/078402
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
姚文杰, 曾湘波, 彭文博, 刘石勇, 谢小兵, 王超, 廖显伯
Yao Wen-Jie(姚文杰), Zeng Xiang-Bo(曾湘波)†, Peng Wen-Bo(彭文博), Liu Shi-Yong(刘石勇), Xie Xiao-Bing(谢小兵), Wang Chao(王超), and Liao Xian-Bo(廖显伯)
摘要: A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc= 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.
中图分类号: (Photoelectric conversion)