中国物理B ›› 2011, Vol. 20 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/20/7/076101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy

赵维, 汪莱, 王嘉星, 罗毅   

  1. State Key Laboratory on Integrated Optoelectronics, and Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2010-10-09 修回日期:2011-03-09 出版日期:2011-07-15 发布日期:2011-07-15

Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy

Zhao Wei(赵维), Wang Lai(汪莱)†, Wang Jia-Xing(王嘉星), and Luo Yi(罗毅)   

  1. State Key Laboratory on Integrated Optoelectronics, and Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2010-10-09 Revised:2011-03-09 Online:2011-07-15 Published:2011-07-15

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摘要： InxGa1 - xN (x ～ 0.04) films are grown by metal organic vapour phase epitaxy. For the samples grown on GaN directly, the relaxation of InGaN happens when its thickness is beyond a critical value. A broad band is observed in the luminescence spectrum, and its intensity increases with the increasing degree of relaxation. Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect. The measurement results of the tensile-strained sample further demonstrate the conclusions.

Abstract: InxGa1 - xN (x ～ 0.04) films are grown by metal organic vapour phase epitaxy. For the samples grown on GaN directly, the relaxation of InGaN happens when its thickness is beyond a critical value. A broad band is observed in the luminescence spectrum, and its intensity increases with the increasing degree of relaxation. Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect. The measurement results of the tensile-strained sample further demonstrate the conclusions.

Key words: InGaN, phase separation, composition inhomogeneity

中图分类号:  (X-ray diffraction)

  • 61.05.cp
64.75.Qr (Phase separation and segregation in semiconductors) 78.30.Fs (III-V and II-VI semiconductors) 81.05.Ea (III-V semiconductors)