中国物理B ›› 2011, Vol. 20 ›› Issue (6): 64401-064401.doi: 10.1088/1674-1056/20/6/064401

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

金冬月, 张万荣, 陈亮, 付强, 肖盈, 王任卿, 赵昕   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2010-11-19 修回日期:2010-12-15 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61006059, 60776051, and 61006044), the Beijing Municipal Natural Science Foundation of China (Grant No. 4082007), the Beijing Municipal Education Committee of China (Grant Nos. KM200710005015 and KM200910005001), the Beijing Municipal Trans-century Talent Project of China (Grant No. 67002013200301), the Beijing Innovatory Talent Training Program of China (Grant No. 00200054RA001), and the Ph. D. Start Science Foundation of Beijing University of Technology of China (Grant No. X0002013201102).

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

Jin Dong-Yue(金冬月)†, Zhang Wan-Rong(张万荣), Chen Liang(陈亮), Fu Qiang(付强), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕)   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2010-11-19 Revised:2010-12-15 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61006059, 60776051, and 61006044), the Beijing Municipal Natural Science Foundation of China (Grant No. 4082007), the Beijing Municipal Education Committee of China (Grant Nos. KM200710005015 and KM200910005001), the Beijing Municipal Trans-century Talent Project of China (Grant No. 67002013200301), the Beijing Innovatory Talent Training Program of China (Grant No. 00200054RA001), and the Ph. D. Start Science Foundation of Beijing University of Technology of China (Grant No. X0002013201102).

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摘要： The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.

Abstract: The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.

Key words: heterojunction bipolar transistor, power, thermal stability, thermal resistance matrix

中图分类号:  (Heat conduction)

  • 44.10.+i
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 91.60.Ki (Thermal properties)