中国物理B ›› 2011, Vol. 20 ›› Issue (3): 33301-033301.doi: 10.1088/1674-1056/20/3/033301

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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

李锡光1, 王占国2, 曾一平3, 孙国胜4, 刘兴昉5, 吴海雷5, 闫果果5, 董林5, 郑柳5, 赵万顺5, 王雷5   

  1. (1)Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China; (2)Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (3)Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (4)Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China; (5)Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2010-09-29 修回日期:2010-11-29 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876003) and the Knowledge Innovation Project of Chinese Academy of Sciences (Grant Nos. Y072011000 and ISCAS2008T04) and the Science and Technology Projects of the State Gr

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

Sun Guo-Sheng(孙国胜)a)b)c), Liu Xing-Fang(刘兴昉)b), Wu Hai-Lei(吴海雷)b), Yan Guo-Guo(闫果果)b), Dong Lin(董林)b), Zheng Liu(郑柳)b), Zhao Wan-Shun(赵万顺)b), Wang Lei(王雷) b), Zeng Yi-Ping(曾一平)a)b), Li Xi-Guang(李锡光)c), and Wang Zhan-Guo(王占国) a)   

  1. a Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China
  • Received:2010-09-29 Revised:2010-11-29 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876003) and the Knowledge Innovation Project of Chinese Academy of Sciences (Grant Nos. Y072011000 and ISCAS2008T04) and the Science and Technology Projects of the State Grid Corporation of China (ZL71-09-001).

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摘要： The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×1018 cm-3 and 8×1018 cm-3 with a carrier mobility of 30--55 cm2/(V·s) for n-type 4H-SiC substrates and 1×1016--3×1016 cm-3 with mobility of 290--490 cm2/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×1016 cm-3 with mobility of 380 cm2/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.

关键词: 4H-SiC, Raman scattering, LOPC modes, transport properties

Abstract: The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon–plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×1018 cm-3 and 8×1018 cm-3 with a carrier mobility of 30–55 cm2/(V·s) for n-type 4H-SiC substrates and 1×1016–3×1016 cm-3 with mobility of 290–490 cm2/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×1016 cm-3 with mobility of 380 cm2/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.

Key words: 4H-SiC, Raman scattering, LOPC modes, transport properties

中图分类号:  (Raman and Rayleigh spectra (including optical scattering) ?)

  • 33.20.Fb
71.20.Nr (Semiconductor compounds)