Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

doi:10.1088/1674-1056/20/12/128101

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 128101-128101.doi: 10.1088/1674-1056/20/12/128101

Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

张玉明¹, 张义门¹, 雷天民¹, 郭辉¹, 王悦湖¹, 汤晓燕¹, 王航¹, 王党朝²

(1)School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; (2)School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Physics and Electronic Engineering, Xianyang Normal College, Xianyang 712000, China

收稿日期:2011-05-08 修回日期:2011-07-19 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the Key Research Foundation of the Ministry of Education of China (Grant No. JY10000925016).

Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

Wang Dang-Chao(王党朝)^a)b)†, Zhang Yu-Ming(张玉明)^a), Zhang Yi-Men(张义门)^a), Lei Tian-Min(雷天民)^a), Guo Hui(郭辉)^a), Wang Yue-Hu(王悦湖)^a), Tang Xiao-Yan(汤晓燕)^a), and Wang Hang(王航)^a)

^a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; ^bSchool of Physics and Electronic Engineering, Xianyang Normal College, Xianyang 712000, China

Received:2011-05-08 Revised:2011-07-19 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the Key Research Foundation of the Ministry of Education of China (Grant No. JY10000925016).

摘要/Abstract

摘要： In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10⁵ Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.

关键词: SiC substrate, epitaxial graphene, Raman spectroscopy

Abstract: In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10⁵ Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.

Key words: SiC substrate, epitaxial graphene, Raman spectroscopy

中图分类号: (Graphene)

81.05.ue

78.30.-j (Infrared and Raman spectra) 61.48.Gh (Structure of graphene)

王党朝, 张玉明, 张义门, 雷天民, 郭辉, 王悦湖, 汤晓燕, 王航. Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition[J]. 中国物理B, 2011, 20(12): 128101-128101.

Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) . Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition[J]. Chin. Phys. B, 2011, 20(12): 128101-128101.

参考文献 19

[1]	Berger C, Song Z M, Li X B, Wu X S, Brown N, Naud C, Mayou D, Li T B, Hass J, Marchenkov A N, Conrad E H, First P N and de Heer W A 2006 Science 312 1191
[2]	Wu Y Q, Ye P D, Capano M A, Xuan Y, Sui Y, Qi M, Cooper J A, Shen T, Pandey D, Prakash G and Reifenberger R 2008 Appl. Phys. Lett. 92 092102
[3]	Gu G, Nie S, Feenstra R M, Devaty R P, Choyke W J, Chan W K and Kane M G 2007 Appl. Phys. Lett. 90 253507
[4]	Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
[5]	Bunch J S, van der Zande A M, Verbridge S S, Frank I W, Tanenbaum D M, Parpia J M, Craighead H G and McEuen P L 2007 Science 315 490
[6]	Heersche H B, Jarillo-Herrero P, Oostinga J B, Vandersypen M K and Morpurgo A F 2007 Nature 446 56
[7]	Meyer J C, Geim A K, Katsnelson M I, Novoselov K S, Booth T J and Roth S 2007 Nature 446 60
[8]	Ohta T, Bostwick A, Seyller T, Horn K and Rotenberg E 2006 Science 313 951
[9]	Hass J, de Heer W A and Conrad E H 2008 J. Phys.: Condens. Matter 20 323202
[10]	Strudwick A J, Creeth G L, Johansson N A B and Marrows C H 2011 Appl. Phys. Lett. 98 051910
[11]	Kou L, He H K and Gao C 2010 Nano-Micro Lett. 2 177
[12]	de Heer W A, Berger C, Wu X S, First P N, Conrad E H, Li X B, Li T B, Sprinkle M, Hass J, Sadowski M L, Potemski M and Martinez Gérard 2007 Solid State Commun. 143 92
[13]	Emtsev K V, Bostwick A, Horn K, Jobst J, Kellogg G L, Ley L, McChesney J L, Ohta T, Reshanov S A, Röhrl J, Rotenberg E, Schmid A K, Waldmann D, Weber H B and Seyller Th 2009 Nat. Mater. 8 203
[14]	Lu W J, Mitchel W C, Boeckl J J, Crenshaw T R, Collins W E, Chang R P H and Feldman L C 2009 J. Electron. Mater. 38 731
[15]	Tedesco J L, Jernigan G G, Culbertson J C, Hite J K, Yang Y, Daniels K M, Myers-Ward R L, Eddy C R, Robinson J A, Trumbull K A, Wetherington M T, Campbell P M and Gaskill D K 2010 Appl. Phys. Lett. 96 222103
[16]	Ferrari A C 2007 Solid State Commun. 143 47
[17]	Bolen M L, Shen T, Gu J J, Colby R, Stach E A, Ye P D and Capano M A 2010 J. Electron. Mater. 39 2696
[18]	Shivaraman S, Chandrashekhar M V S, Boeckl J J and Spencer M G 2009 J. Electron. Mater. 38 725
[19]	Lee D S, Riedl C, Krauss B, Klitzing K V, Starke U and Smet J H 2008 Nano. Lett. 8 4320

Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wangwei Xu(许望伟), Shijie Sun(孙诗杰), Muzi Yang(杨慕紫), Zhenliang Hao(郝振亮), Lei Gao(高蕾), Jianchen Lu(卢建臣), Jiasen Zhu(朱嘉森), Jian Chen(陈建), and Jinming Cai(蔡金明). Polarization Raman spectra of graphene nanoribbons[J]. 中国物理B, 2023, 32(4): 46803-046803.
[2]	Xia Zhao(赵霞), Sheng-Hua Mei(梅升华), Zhi Zheng(郑直), Yue Gao(高悦), Jiang-Zhi Chen(陈姜智), Yue-Gao Liu(刘月高), Jian-Guo Sun(孙建国), Yan Li(李艳), and Jian-Hui Sun(孙建辉). In situ study of calcite-III dimorphism using dynamic diamond anvil cell[J]. 中国物理B, 2022, 31(9): 96201-096201.
[3]	Meng Peng(彭猛), Jun-Bo Yang(杨俊波), Hao Chen(陈浩), Bo-Yuan Li(李博源), Xu-Lei Ge(葛绪雷), Xiao-Hu Yang(杨晓虎), Guo-Bo Zhang(张国博), and Yan-Yun Ma(马燕云). Radiation effects of electrons on multilayer FePS₃ studied with laser plasma accelerator[J]. 中国物理B, 2022, 31(8): 86102-086102.
[4]	Xiao-Lei Zhang(张晓蕾), Jie Zhang(张洁), Yuan Luo(罗元), and Jia Ran(冉佳). SERS activity of carbon nanotubes modified by silver nanoparticles with different particle sizes[J]. 中国物理B, 2022, 31(7): 77401-077401.
[5]	Hengli Xie(谢恒立), Jiaxiang Wang(王家祥), Lingrui Wang(王玲瑞), Yong Yan(闫勇), Juan Guo(郭娟), Qilong Gao(高其龙), Mingju Chao(晁明举), Erjun Liang(梁二军), and Xiao Ren(任霄). Structural evolution and bandgap modulation of layered β-GeSe₂ single crystal under high pressure[J]. 中国物理B, 2022, 31(7): 76101-076101.
[6]	Tingting Ye(叶婷婷), Hong Zeng(曾鸿), Peng Cheng(程鹏), Deyuan Yao(姚德元), Xiaomei Pan(潘孝美), Xiao Zhang(张晓), and Junfeng Ding(丁俊峰). Photothermal-chemical synthesis of P-S-H ternary hydride at high pressures[J]. 中国物理B, 2022, 31(6): 67402-067402.
[7]	Hong Zeng(曾鸿), Tingting Ye(叶婷婷), Peng Cheng(程鹏), Deyuan Yao(姚德元), and Junfeng Ding(丁俊峰). Raman spectroscopy investigation on the pressure-induced structural and magnetic phase transition in two-dimensional antiferromagnet FePS₃[J]. 中国物理B, 2022, 31(5): 56109-056109.
[8]	Johannes M. A. Lechner, Pablo Hernández López, and Sebastian Heeg. Raman spectroscopy of isolated carbyne chains confined in carbon nanotubes: Progress and prospects[J]. 中国物理B, 2022, 31(12): 127801-127801.
[9]	Kaiyao Zhou(周楷尧), Jun Deng(邓俊), Long Chen(陈龙), Wei Xia(夏威), Yanfeng Guo(郭艳峰), Yang Yang(杨洋), Jian-Gang Guo(郭建刚), and Liwei Guo(郭丽伟). Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb₂SiTe₄[J]. 中国物理B, 2021, 30(8): 87202-087202.
[10]	Dongxia Chen(陈冬霞), Qiang Sun(孙强), Zhanjun Yu(于占军), Mingyu Li(李明玉), Juan Guo(郭娟), Mingju Chao(晁明举), and Erjun Liang(梁二军). Effects of W⁶⁺ occupying Sc³⁺ on the structure, vibration, and thermal expansion properties of scandium tungstate[J]. 中国物理B, 2021, 30(6): 66501-066501.
[11]	Xiao Zhang(张晓). Synthesis of ternary compound in H-S-Se system at high pressures[J]. 中国物理B, 2021, 30(12): 127801-127801.
[12]	Yu-Jia Sun(孙宇伽), Si-Min Pang(庞思敏), and Jun Zhang(张俊). Review of Raman spectroscopy of two-dimensional magnetic van der Waals materials[J]. 中国物理B, 2021, 30(11): 117104-117104.
[13]	Tingting Liu(柳婷婷), Chuanyu Liu(刘船宇), Jialing Shi(石嘉玲), Lingjun Zhang(张玲君), Xiaonan Sun(孙晓楠), and Yingzhou Huang(黄映洲). Self-assembly 2D plasmonic nanorice film for surface-enhanced Raman spectroscopy[J]. 中国物理B, 2021, 30(11): 117301-117301.
[14]	Wen-Jun Wang(王文君), Xi-Tong Xu(许锡童), Jie Shen(沈洁), Zhe Wang(王哲), Shi-Le Zhang(张仕乐), and Zhe Qu(屈哲). Spin-phonon coupling in van der Waals antiferromagnet VOCl[J]. 中国物理B, 2021, 30(10): 107502-107502.
[15]	沈雄, 冯国英, 景晟, 韩敬华, 李亚国, 刘锴. Damage characteristics of laser plasma shock wave on rear surface of fused silica glass[J]. 中国物理B, 2019, 28(8): 85202-085202.