×
模态框(Modal)标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框(Modal)标题
在这里添加一些文本
关闭
Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
南雅公, 蒲红斌, 曹琳, 任杰
Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰)
中国物理B . 2010, (
10
): 107304 -107304 . DOI: 10.1088/1674-1056/19/10/107304