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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
南雅公, 蒲红斌, 曹琳, 任杰
Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰)
中国物理B . 2010, (
10
): 107304 -107304 . DOI: 10.1088/1674-1056/19/10/107304