STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

doi:10.1088/1674-1056/19/10/106102

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 106102-106102.doi: 10.1088/1674-1056/19/10/106102

STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

Jeyanthinath Mayandi¹, 王学森¹, 薛其坤², 徐茂杰³, 贾金锋³, 窦晓鸣⁴

(1)Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore; (2)Department of Physics, Tsinghua University, Beijing 100084, China; (3)Institute of Optical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; (4)Institute of Optical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

收稿日期:2010-02-09 修回日期:2010-05-13 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the grants from the National University of Singapore (R-144-000-069-101) and the SERC of Singapore (R-144-000-088-305).

STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

Xu Mao-Jie(徐茂杰)^a), Jeyanthinath Mayandi^b), Wang Xue-Sen(王学森)^b), Jia Jin-Feng(贾金锋)^a),Xue Qi-Kun(薛其坤)^c), and Dou Xiao-Ming(窦晓鸣)^a)d)^†

^a Institute of Optical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; ^b Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore; ^c Department of Physics, Tsinghua University, Beijing 100084, China; ^d School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

Received:2010-02-09 Revised:2010-05-13 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the grants from the National University of Singapore (R-144-000-069-101) and the SERC of Singapore (R-144-000-088-305).

摘要/Abstract

摘要： Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D_B steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits.

Abstract: Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D_B steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits.

Key words: pit, facet, homoepitaxy, Si(001)

中图分类号: (Structure of clean surfaces (and surface reconstruction))

68.35.B-

68.35.Dv (Composition, segregation; defects and impurities) 68.35.Fx (Diffusion; interface formation) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 68.55.A- (Nucleation and growth) 81.40.Gh (Other heat and thermomechanical treatments)

徐茂杰, Jeyanthinath Mayandi, 王学森, 贾金锋, 薛其坤, 窦晓鸣. STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface[J]. 中国物理B, 2010, 19(10): 106102-106102.

Xu Mao-Jie(徐茂杰), Jeyanthinath Mayandi, Wang Xue-Sen(王学森), Jia Jin-Feng(贾金锋),Xue Qi-Kun(薛其坤), and Dou Xiao-Ming(窦晓鸣). STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface[J]. Chin. Phys. B, 2010, 19(10): 106102-106102.

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STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

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