中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3980-3984.doi: 10.1088/1674-1056/18/9/060
陈弘1, 鲁武2, Timothy D Corrigan3, 王占国4, 赵建芝5, 林兆军5, 张宇5, 吕元杰5
Zhao Jian-Zhi(赵建芝)a), Lin Zhao-Jun(林兆军)a)†, Timothy D Corriganb), Zhang Yu(张宇)a), Lü Yuan-Jie(吕元杰)a), Lu Wu(鲁武)c), Wang Zhan-Guo(王占国)d), and Chen Hong(陈弘)e)
摘要: Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3~V, the value of the relative permittivity decreases from 7.184 to 7.093.
中图分类号: (Permittivity (dielectric function))