中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3980-3984.doi: 10.1088/1674-1056/18/9/060

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Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

陈弘1, 鲁武2, Timothy D Corrigan3, 王占国4, 赵建芝5, 林兆军5, 张宇5, 吕元杰5   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210, USA; (3)Department of Physics, University of Maryland, College Park, MD 20740, USA; (4)Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (5)School of Physics, Shandong University, Jinan 2
  • 收稿日期:2008-12-21 修回日期:2009-04-11 出版日期:2009-09-20 发布日期:2009-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10774090) and the National Basic Research Program of China (Grant No 2007CB936602).

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Zhao Jian-Zhi(赵建芝)a), Lin Zhao-Jun(林兆军)a)†, Timothy D Corriganb), Zhang Yu(张宇)a), Lü Yuan-Jie(吕元杰)a), Lu Wu(鲁武)c), Wang Zhan-Guo(王占国)d), and Chen Hong(陈弘)e)   

  1. a  School of Physics, Shandong University, Jinan 250100, China; b  Department of Physics, University of Maryland, College Park, MD 20740, USA; c  Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210, USA; d Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; e Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2008-12-21 Revised:2009-04-11 Online:2009-09-20 Published:2009-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10774090) and the National Basic Research Program of China (Grant No 2007CB936602).

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摘要： Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3~V, the value of the relative permittivity decreases from 7.184 to 7.093.

Abstract: Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

Key words: relative permittivity, AlGaN barrier layer, AlGaN/GaN heterostructures

中图分类号:  (Permittivity (dielectric function))

  • 77.22.Ch
72.40.+w (Photoconduction and photovoltaic effects) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)