中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2542-2544.doi: 10.1088/1674-1056/18/6/070

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Zero biased Ge-on-Si photodetector with a bandwidth of 4.72~GHz at 1550~nm

薛海韵, 薛春来, 成步文, 俞育德, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2008-11-19 修回日期:2008-11-27 出版日期:2009-06-20 发布日期:2009-06-20
  • 基金资助:
    Project supported by the National High-Technology Research and Development Program of China (Grant No 2006AA03Z415), the Major State Basic Program of China (Grant No 2007CB613404), and the National Natural Science Foundation of China (Grant No 60676005).

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

Xue Hai-Yun(薛海韵), Xue Chun-Lai(薛春来), Cheng Bu-Wen(成步文)†, Yu Yu-De(俞育德), and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2008-11-19 Revised:2008-11-27 Online:2009-06-20 Published:2009-06-20
  • Supported by:
    Project supported by the National High-Technology Research and Development Program of China (Grant No 2006AA03Z415), the Major State Basic Program of China (Grant No 2007CB613404), and the National Natural Science Foundation of China (Grant No 60676005).

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摘要： High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8~μm Ge, with responsivities as high as 0.38 and 0.21~A/W at 1.31 and 1.55~μ m, respectively. The dark current density is 0.37~mA/cm2 and 29.4~mA/cm2 at 0~V and a reverse bias of 0.5~V. The detector with a diameter of 30~μ m, a 3~dB-bandwidth of 4.72~GHz at an incident wavelength of 1550~nm and zero external bias has been measured. At a reverse bias of 3~V, the bandwidth is 6.28~GHz.

关键词: Si-based, Ge, epitaxy, photodetector

Abstract: High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm2 and 29.4 mA/cm2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550~nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

Key words: Si-based, Ge, epitaxy, photodetector

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Cw (Elemental semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))