中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2223-2228.doi: 10.1088/1674-1056/18/6/020

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Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

郭剑川, 左玉华, 张云, 丁武昌, 成步文, 余金中, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2008-07-01 修回日期:2008-12-30 出版日期:2009-06-20 发布日期:2009-06-20
  • 基金资助:
    Project supported by the Major State Basic Research Program of China (Grant No 2006CB302802).

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

Guo Jian-Chuan(郭剑川)†, Zuo Yu-Hua(左玉华), Zhang Yun(张云), Ding Wu-Chang(丁武昌), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2008-07-01 Revised:2008-12-30 Online:2009-06-20 Published:2009-06-20
  • Supported by:
    Project supported by the Major State Basic Research Program of China (Grant No 2006CB302802).

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摘要： With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10~nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

关键词: electrical bandwidth, frequency response, optical delay, photodetectors

Abstract: With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

Key words: electrical bandwidth, frequency response, optical delay, photodetectors

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
85.60.Bt (Optoelectronic device characterization, design, and modeling)