中国物理B ›› 2008, Vol. 17 ›› Issue (10): 3875-3879.doi: 10.1088/1674-1056/17/10/054

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

王鼎渠, 周兆英, 朱 荣, 叶雄英   

  1. State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
  • 收稿日期:2008-03-27 修回日期:2008-04-21 出版日期:2008-10-20 发布日期:2008-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50575113) and Program for NCET.

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

Wang Ding-Qu(王鼎渠)†, Zhou Zhao-Ying(周兆英), Zhu Rong(朱荣), and Ye Xiong-Ying(叶雄英)   

  1. State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
  • Received:2008-03-27 Revised:2008-04-21 Online:2008-10-20 Published:2008-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50575113) and Program for NCET.

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摘要： This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor--metal (MSM) structure by dielectrophoresis and studying on its electrical characteristics by using current-voltage ($I-V$) measurements. An electronic model with two back to back Schottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured $I-V$ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.

Abstract: This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor--metal (MSM) structure by dielectrophoresis and studying on its electrical characteristics by using current-voltage ($I-V$) measurements. An electronic model with two back to back Schottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured $I-V$ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.

Key words: ZnO nanowire, MSM structure, Schottky barrier, optoelectronic property

中图分类号:  (Metal-semiconductor-metal structures)

  • 73.40.Sx
73.63.Nm (Quantum wires) 78.67.Lt (Quantum wires) 82.45.Yz (Nanostructured materials in electrochemistry) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 72.40.+w (Photoconduction and photovoltaic effects)