中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2751-2755.doi: 10.1088/1009-1963/15/11/049

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Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation

陈文新1, 卜伟海2, 黄如2, 黎明2, 田豫2, 吴大可2, 王阳元2   

  1. (1)Department of Electrical & Electronic Engineering,Hong Kong University of Science & Technology, Hong Kong, China; (2)Institute of Microelectronics, Peking University,Beijing 100871, China
  • 收稿日期:2006-04-06 修回日期:2006-06-26 出版日期:2006-11-20 发布日期:2006-11-20
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No~90207004) and State Key Fundamental Research Project of China.

Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation

Bu Wei-Hai(卜伟海)a), Huang Ru(黄如)a)†, Li Ming(黎明)a), Tian Yu(田豫)a), Wu Da-Ke(吴大可)a), Chan Man-Sun(陈文新)b), and Wang Yang-Yuan(王阳元)a)   

  1. a Institute of Microelectronics, Peking University,Beijing 100871, China; b  Department of Electrical & Electronic Engineering,Hong Kong University of Science & Technology, Hong Kong, China
  • Received:2006-04-06 Revised:2006-06-26 Online:2006-11-20 Published:2006-11-20
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No~90207004) and State Key Fundamental Research Project of China.

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摘要： In this paper, a method to fabricate Silicon-on-Nothing (SON) MOSFETs using H$^{ + }$ and He$^{ + }$ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.

关键词: Silicon-on-Insulator (SOI), SON, hydrogen and helium co-implantation

Abstract: In this paper, a method to fabricate Silicon-on-Nothing (SON) MOSFETs using H$^{ + }$ and He$^{ + }$ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.

Key words: Silicon-on-Insulator (SOI), SON, hydrogen and helium co-implantation

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)