中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2407-2414.doi: 10.1088/1009-1963/15/10/037

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The photoluminescence of ZnSe bulk single crystals excited by femtosecond pulse

介万奇1, 张诗按2, 孙真荣2, 徐可为3, 李焕勇4   

  1. (1)College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; (2)Key Laboratory for Optics and Magnetic Resonance Spectroscopy, Department of Physics, East China Normal University. Shanghai 200062, China; (3)State Key Laboratory for Mechanical Behavior of Materials, Xi`an Jiaotong University, Xi'an 710049, China; (4)State Key Laboratory for Mechanical Behavior of Materials, Xi`an Jiaotong University, Xi'an 710049, China;College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  • 收稿日期:2005-06-15 修回日期:2006-06-05 出版日期:2006-10-20 发布日期:2006-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50502028 and 50336040) and the China Postdoctoral Science Foundation (Grant No 2004036139).

The photoluminescence of ZnSe bulk single crystals excited by femtosecond pulse

Li Huan-Yong(李焕勇)a)b)†, Jie Wan-Qi (介万奇)b), Zhang Shi-An(张诗按)c), Sun Zhen-Rong(孙真荣)c), and Xu Ke-Wei(徐可为)a)   

  1. a State Key Laboratory for Mechanical Behavior of Materials, Xi`an Jiaotong University, Xi'an 710049, China; b College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; c Key Laboratory for Optics and Magnetic Resonance Spectroscopy, Department of Physics, East China Normal University. Shanghai 200062, China
  • Received:2005-06-15 Revised:2006-06-05 Online:2006-10-20 Published:2006-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50502028 and 50336040) and the China Postdoctoral Science Foundation (Grant No 2004036139).

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摘要： This paper reports on the photoluminescence spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500--700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain \va in ZnSe crystal is estimated to be about 8.8 \ti10-3 at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500--700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor--vacancy pair, and it is also influenced by a few selenium defects and the temperature. The rapid decrease in photoluminescence intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine--zinc vacancy in 500--700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He--Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.

关键词: photoluminescence, femtosecond pulse, ZnSe crystal, defects

Abstract: This paper reports on the photoluminescence spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500--700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain $\varepsilon$ in ZnSe crystal is estimated to be about $8.8\times10^{-3}$ at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500--700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor--vacancy pair, and it is also influenced by a few selenium defects and the temperature. The rapid decrease in photoluminescence intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine--zinc vacancy in 500--700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He--Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.

Key words: photoluminescence, femtosecond pulse, ZnSe crystal, defects

中图分类号:  (II-VI semiconductors)

  • 78.55.Et
61.72.J- (Point defects and defect clusters) 78.47.-p (Spectroscopy of solid state dynamics)